Yu Weiyang, Zhang Xiaoli, Zhang Yuling, Wu Yali, Li Rui, Zhang Wei-Bing
School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo, 454000, Henan, China.
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha, 410114, Hunan, China.
Phys Chem Chem Phys. 2024 Sep 11;26(35):23419-23428. doi: 10.1039/d4cp01840k.
Exploring multiferroic materials that combine magnetic and ferroelectric properties is scientifically interesting and has important technical implications for many functions of nanoscale devices. In this work, spintronics and magnetoelectric coupling devices are proposed in two-dimensional (2D) layered ferromagnetic (FM)/ferroelectric (FE) van de Waals (vdW) heterostructures, VSeTe/ScCO, employing density functional theory (DFT) calculations. The results indicate that the VSeTe/ScCO vdW heterostructure changes from a metal to a semiconductor in ScCO-↑ and ScCO-↓ polarization states. At the same time, the charge at the interface of the VSeTe/ScCO heterostructure will also be redistributed with the transformation of the ferroelectric polarization state, resulting in the change of the distribution of the electronic states near the Fermi level, and thus the change in the magnetic anisotropy energy () of the heterostructure. Interestingly, biaxial strain brings reversibility and non-volatile regulation to the heterostructure of semiconductors and metals. The results provide an effective way to fabricate magnetoelectric coupling devices with 2D multiferroic heterostructures.
探索兼具磁性和铁电特性的多铁性材料在科学上具有重要意义，并且对纳米级器件的多种功能有着重要的技术影响。在这项工作中，利用密度泛函理论（DFT）计算，在二维（2D）层状铁磁（FM）/铁电（FE）范德华（vdW）异质结构VSeTe/ScCO中提出了自旋电子学和磁电耦合器件。结果表明，VSeTe/ScCO vdW异质结构在ScCO-↑和ScCO-↓极化状态下从金属转变为半导体。同时，VSeTe/ScCO异质结构界面处的电荷也会随着铁电极化状态的转变而重新分布，导致费米能级附近电子态分布的变化，进而导致异质结构的磁各向异性能量（）发生变化。有趣的是，双轴应变给半导体和金属的异质结构带来了可逆性和非易失性调节。这些结果为制造具有二维多铁性异质结构的磁电耦合器件提供了一种有效方法。
