Ali Rana Basit, Lee Young Jae, Sial Qadeer Akbar, Duy Le Thai, Seo Hyungtak
Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea.
Faculty of Materials Science and Technology, University of Science, HoChiMinh city 70000, Viet Nam; Vietnam National University (VNU), HoChiMinh city 70000, Viet Nam.
J Colloid Interface Sci. 2024 Jul;665:19-31. doi: 10.1016/j.jcis.2024.03.069. Epub 2024 Mar 11.
In this study, the impact of lead (Pb) doping on the photoelectrochemical (PEC) water splitting performance of tungsten oxide (WO) photoanodes was investigated through a combination of experimental and theoretical approaches. Pb-doped WO nanostructured thin films were synthesized hydrothermally, and extensive characterizations were conducted to study their morphologies, band edge, optical and photoelectrochemical properties. Pb-doped WO exhibited efficient carrier density and charge separations by reducing the charge transfer resistance. The 0.96 at% Pb doping shows a record photocurrent of ∼ 1.49 mAcm and ∼ 3.44 mAcm (with the hole scavenger) at 1.23 V vs. RHE besides yielding a high charge separation and Faradaic efficiencies of ∼ 86 % and > 90 %, respectively. A shift in the Fermi level towards the conduction band was also observed upon the Pb doping. Additionally, density functional theory (DFT) simulations demonstrated the changes in the density of states and bandgap upon Pb doping, exhibiting favorable changes in the surface and bulk properties of WO.
在本研究中,通过实验和理论相结合的方法,研究了铅(Pb)掺杂对氧化钨(WO)光阳极光电化学(PEC)水分解性能的影响。采用水热法合成了掺Pb的WO纳米结构薄膜,并进行了广泛的表征以研究其形貌、带边、光学和光电化学性质。掺Pb的WO通过降低电荷转移电阻表现出有效的载流子密度和电荷分离。除了分别产生约86%和>90%的高电荷分离效率和法拉第效率外,0.96原子%的Pb掺杂在相对于可逆氢电极(RHE)为1.23 V时显示出约1.49 mA/cm²和约3.44 mA/cm²(有 hole scavenger 时)的创纪录光电流。在Pb掺杂时还观察到费米能级向导带的移动。此外,密度泛函理论(DFT)模拟表明了Pb掺杂后态密度和带隙的变化,显示出WO表面和体相性质的有利变化。