Wang Xiaozhi, Sun Hongchen, Zhao Han, Wang Gang, Li Yingxuan, Tang Mingyang, Xu Ran, Feng Yujun, Wei Xiaoyong, Xu Zhuo
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Suzhou Sicui Electronic Functional Material Technology Research Institute Co., Ltd., Suzhou Industrial Technology Research Institute, Suzhou 215000, China.
ACS Appl Mater Interfaces. 2024 Apr 10;16(14):17787-17796. doi: 10.1021/acsami.3c19123. Epub 2024 Mar 27.
PbZrO-based antiferroelectric (AFE) ceramic materials have emerged as potential candidates for the next generation of high-energy multilayer ceramic capacitors (MLCCs) because of their distinctive characteristics of double hysteresis loops. The energy storage efficiency of orthorhombic AFE ceramics with ultrahigh storage density is relatively low, which hinders their practical application. In this study, the low efficiency limit of PLZST-based orthorhombic ceramics was overcome by precisely adjusting the Sn content in the (PbCaLa)(ZrSnTi)O AFE ceramics. On one hand, the addition of Sn disrupts the original long-range dipole and improves the rapid response of polarization reversal under the applied voltage. As a result, the difference in electric hysteresis under an electric field is reduced, leading to a significant improvement in energy storage efficiency. On the other hand, increasing the Sn content suppresses the formation of oxygen vacancies, inhibiting grain growth and strengthening grain bonding. This results in ceramics with a high breakdown field strength. Ultimately, the resulting PLCZST ceramics reveal an expressively improved recoverable energy density of 10.2 J cm together with a high energy efficiency of 91.4% under a high applied electric field of 560 kV cm. The present study demonstrates the tunability of performance in orthorhombic PLZST AFE ceramics, thereby introducing a ceramic material with exceptional energy storage capabilities for MLCC applications.
基于PbZrO的反铁电（AFE）陶瓷材料因其独特的双滞后回线特性，已成为下一代高能多层陶瓷电容器（MLCC）的潜在候选材料。具有超高储能密度的正交晶系AFE陶瓷的储能效率相对较低，这阻碍了它们的实际应用。在本研究中，通过精确调整(PbCaLa)(ZrSnTi)O AFE陶瓷中的Sn含量，克服了基于PLZST的正交晶系陶瓷的低效率限制。一方面，Sn的添加破坏了原有的长程偶极子，提高了施加电压下极化反转的快速响应。结果，电场下电滞的差异减小，导致储能效率显著提高。另一方面，增加Sn含量抑制了氧空位的形成，抑制了晶粒生长并强化了晶粒结合。这导致陶瓷具有高击穿场强。最终，所得的PLCZST陶瓷在560 kV/cm的高施加电场下显示出10.2 J/cm的显著提高的可恢复能量密度以及91.4%的高能量效率。本研究证明了正交晶系PLZST AFE陶瓷性能的可调性，从而引入了一种具有卓越储能能力的陶瓷材料用于MLCC应用。
