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正在制备的h-BN:硼嗪在Rh(111)上的表面化学。

h-BN in the making: The surface chemistry of borazine on Rh(111).

作者信息

Freiberger Eva Marie, Düll Fabian, Bachmann Phiona, Steinhauer Johann, Williams Federico J, Steinrück Hans-Peter, Papp Christian

机构信息

Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstraße 3, 91058 Erlangen, Germany.

Departamento de Química Inorgánica, Analítica y Química Física, Facultad de Ciencias Exactas y Naturales, INQUIMAE-CONICET, Universidad de Buenos Aires, Pabellón 2, Buenos Aires C1428EHA, Argentina.

出版信息

J Chem Phys. 2024 Apr 21;160(15). doi: 10.1063/5.0202431.

Abstract

Borazine is a well-established precursor molecule for the growth of hexagonal boron nitride (h-BN) via chemical vapor deposition on metal substrates. To understand the formation of the h-BN/Rh(111) moiré from borazine on a molecular level, we investigated the low-temperature adsorption and thermally induced on-surface reaction of borazine on Rh(111) in situ using synchrotron radiation-based high-resolution x-ray photoelectron spectroscopy (XPS), temperature-programmed XPS, and near-edge x-ray absorption fine structure measurements. We find that borazine adsorbs mainly as an intact molecule and have identified a flat-lying adsorption geometry. Borazine multilayers are observed to desorb below 200 K. Starting at about 300 K, dehydrogenation of the remaining borazine and borazine fragments takes place, and disordered boron nitride starts to grow. Above 600 K, the formation of the h-BN sets in. Finally, at 1100 K, the conversion to h-BN is complete. The h-BN formed by deposition and post-annealing was compared to the h-BN grown by an established procedure, proving the successful preparation of the desired two-dimensional material.

摘要

硼嗪是一种成熟的前驱体分子,可通过化学气相沉积在金属衬底上生长六方氮化硼(h-BN)。为了在分子水平上理解硼嗪在Rh(111)上形成h-BN/Rh(111)莫尔条纹的过程,我们使用基于同步辐射的高分辨率X射线光电子能谱(XPS)、程序升温XPS和近边X射线吸收精细结构测量,对硼嗪在Rh(111)上的低温吸附和热诱导表面反应进行了原位研究。我们发现硼嗪主要以完整分子的形式吸附,并确定了一种平躺的吸附几何结构。观察到硼嗪多层膜在200 K以下解吸。从大约300 K开始,剩余的硼嗪和硼嗪片段发生脱氢反应,无序的氮化硼开始生长。在600 K以上,h-BN开始形成。最后,在1100 K时,向h-BN的转化完成。将通过沉积和后退火形成的h-BN与通过既定程序生长的h-BN进行了比较,证明了所需二维材料的成功制备。

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