Bulk Trapping Organic Semiconductor with Amino-Additive Enabling Ultrasensitive NO Sensors.

Organic semiconductor (OSC) gas sensors have garnered considerable attention due to their promising selectivity and inherent flexibility. Introducing a functional group or modification layer is an important route to modulate the doping/trapping state of the active layer and the gas absorption/desorption process. However, the majority of the functionalization lies in the surface/interface assembling process, which is difficult to control the functional group density. This in turn brings challenges for precise modulation of the charge transport and the doping/trapping density, which will affect the repeatability and reproducibility of sensing performance. Herein, we propose a facile bulk trapping strategy incorporating amino-terminated additive molecules via the vacuum deposition process, achieving ultrahigh sensitivity of ∼2000%/ppm at room temperature to NO gas and approaching ∼3000%/ppm at 50 °C. Additionally, the device exhibits commendable reproducibility, stability, and low concentration detection ability, reaching down to several ppb, indicating promising potential for future applications. Comprehensive analysis of electrical properties and density functional theory calculations reveals that these exceptional properties arise from the favorable electrical characteristics of the bulk trapping structure, the high mobility of C8-BTBT, and the elevated adsorption energy of NO. This approach enables the construction of stable and reproducible sensitive sensors and helps to understand the sensing mechanism in OSC gas sensors.