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Reversible Switching Between Microwave Absorption and EMI Shielding of VO Composite Foam.

作者信息

Liao Si-Yuan, Wang Xiao-Yun, Shi Yu-Ying, Wang Qiao-Feng, Gu Xin-Yin, Hu You-Gen, Zhu Peng-Li, Sun Rong, Wan Yan-Jun

机构信息

Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.

University of Chinese Academy of Sciences, Beijing, 100049, China.

出版信息

Small. 2024 Sep;20(36):e2402841. doi: 10.1002/smll.202402841. Epub 2024 May 1.

DOI:10.1002/smll.202402841
PMID:38693072
Abstract

Developing lightweight composite with reversible switching between microwave (MW) absorption and electromagnetic interference (EMI) shielding is promising yet remains highly challenging due to the completely inconsistent attenuation mechanism for electromagnetic (EM) radiation. Here, a lightweight vanadium dioxide/expanded polymer microsphere composites foam (VO/EPM) is designed and fabricated with porous structures and 3D VO interconnection, which possesses reversible switching function between MW absorption and EMI shielding under thermal stimulation. The VO/EPM exhibits MW absorption with a broad effective absorption bandwidth of 3.25 GHz at room temperature (25 °C), while provides EMI shielding of 23.1 dB at moderately high temperature (100 °C). This reversible switching performance relies on the porous structure and tunability of electrical conductivity, complex permittivity, and impedance matching, which are substantially induced by the convertible crystal structure and electronic structure of VO. Finite element simulation is employed to qualitatively investigate the change in interaction between EM waves and VO/EPM before and after the phase transition. Moreover, the application of VO/EPM is demonstrated with a reversible switching function in controlling wireless transmission on/off, showcasing its excellent cycling stability. This kind of smart material with a reversible switching function shows great potential in next-generation electronic devices.

摘要

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