Wang Xin, Han Chao, Han Yun, Huang Run, Sun Hai, Guo Panjie, Liu Xuan, Huang Mengting, Chen Ying, Wu Helong, Zhang Jinyan, Yan Xuecheng, Mao Zhelin, Du Aijun, Jia Yi, Wang Lei
College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, P. R. China.
School of Environment and Science, Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan Campus, Brisbane, QLD, 4111, Australia.
Small. 2024 Sep;20(36):e2401447. doi: 10.1002/smll.202401447. Epub 2024 May 1.
Topological defects are widely recognized as effective active sites toward a variety of electrochemical reactions. However, the role of defect curvature is still not fully understood. Herein, carbon nanomaterials with rich topological defect sites of tunable curvature is reported. The curved defective surface is realized by controlling the high-temperature pyrolytic shrinkage process of precursors. Theoretical calculations demonstrate bending the defect sites can change the local electronic structure, promote the charge transfer to key intermediates, and lower the energy barrier for oxygen reduction reaction (ORR). Experimental results convince structural superiority of highly-curved defective sites, with a high kinetic current density of 22.5 mA cm at 0.8 V versus RHE for high-curvature defective carbon (HCDC), ≈18 times that of low-curvature defective carbon (LCDC). Further raising the defect densities in HCDC leads to the dual-regulated products (HCHDC), which exhibit exceptionally outstanding ORR activity in both alkaline and acidic media (half-wave potentials: 0.88 and 0.74 V), outperforming most of the reported metal-free carbon catalysts. This work uncovers the curvature-activity relationship in carbon defect for ORR and provides new guidance to design advanced catalysts via curvature-engineering.
拓扑缺陷作为各种电化学反应的有效活性位点已得到广泛认可。然而,缺陷曲率的作用仍未得到充分理解。在此,报道了具有可调曲率的丰富拓扑缺陷位点的碳纳米材料。通过控制前驱体的高温热解收缩过程实现了弯曲的缺陷表面。理论计算表明,弯曲缺陷位点可改变局部电子结构,促进电荷转移至关键中间体,并降低氧还原反应(ORR)的能垒。实验结果证实了高度弯曲缺陷位点的结构优势,对于高曲率缺陷碳(HCDC),在0.8 V(相对于可逆氢电极,RHE)时的动力学电流密度高达22.5 mA cm,约为低曲率缺陷碳(LCDC)的18倍。进一步提高HCDC中的缺陷密度会产生双调控产物(HCHDC),其在碱性和酸性介质中均表现出异常出色的ORR活性(半波电位:0.88和0.74 V),优于大多数已报道的无金属碳催化剂。这项工作揭示了碳缺陷中曲率与活性的关系,并为通过曲率工程设计先进催化剂提供了新的指导。