Mishra Shashank, Liu Fengyuan, Shakthivel Dhayalan, Rai Beena, Georgiev Vihar
James Watt School of Engineering, University of Glasgow G12 8QQ Glasgow UK
TCS Research, Tata Consultancy Services Limited Pune 411013 India.
Nanoscale Adv. 2024 Mar 21;6(9):2371-2379. doi: 10.1039/d3na00878a. eCollection 2024 Apr 30.
Heterostructures based on graphene and other 2D materials have received significant attention in recent years. However, it is challenging to fabricate them with an ultra-clean interface due to unwanted foreign molecules, which usually get introduced during their transfer to a desired substrate. Clean nanofabrication is critical for the utilization of these materials in 2D nanoelectronics devices and circuits, and therefore, it is important to understand the influence of the "non-ideal" interface. Inspired by the wet-transfer process of the CVD-grown graphene, herein, we present an atomistic simulation of the graphene-Au interface, where water molecules often get trapped during the transfer process. By using molecular dynamics (MD) simulations, we investigated the structural variations of the trapped water and the traction-separation curve derived from the graphene-Au interface at 300 K. We observed the formation of an ice-like structure with square-ice patterns when the thickness of the water film was <5 Å. This could cause undesirable strain in the graphene layer and hence affect the performance of devices developed from it. We also observed that at higher thicknesses the water film is predominantly present in the liquid state. The traction separation curve showed that the adhesion of graphene is better in the presence of an ice-like structure. This study explains the behaviour of water confined at the nanoscale region and advances our understanding of the graphene-Au interface in 2D nanoelectronics devices and circuits.
近年来,基于石墨烯和其他二维材料的异质结构受到了广泛关注。然而,由于不需要的外来分子,在制备具有超清洁界面的异质结构时面临挑战,这些外来分子通常在将其转移到所需衬底的过程中被引入。清洁的纳米制造对于这些材料在二维纳米电子器件和电路中的应用至关重要,因此,了解“非理想”界面的影响很重要。受化学气相沉积(CVD)生长的石墨烯湿法转移过程的启发,在此,我们展示了石墨烯-金界面的原子模拟,在转移过程中水分子经常被困在该界面。通过使用分子动力学(MD)模拟,我们研究了被困水的结构变化以及在300 K下从石墨烯-金界面得出的牵引-分离曲线。当水膜厚度<5 Å时,我们观察到形成了具有方形冰图案的类冰结构。这可能会在石墨烯层中引起不良应变,从而影响由此开发的器件的性能。我们还观察到,在较高厚度下,水膜主要以液态存在。牵引分离曲线表明,在存在类冰结构的情况下,石墨烯的附着力更好。这项研究解释了限制在纳米级区域的水的行为,并增进了我们对二维纳米电子器件和电路中石墨烯-金界面的理解。