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用于研究无铅双钙钛矿BaAsBO(B[键,双键]Nb,Ta)化合物光电和输运现象的综合第一性原理

Comprehensive first principles to investigate optoelectronic and transport phenomenon of lead-free double perovskites BaAsBO (B[bond, double bond]Nb, Ta) compounds.

作者信息

Manzoor Mumtaz, Behera Debidatta, Sharma Ramesh, Moayad A J A, Al-Kahtani Abdullah A, Anil Kumar Yedluri

机构信息

Institute of physics, Slovak Academy of Science, Dubravska Cesta 9, 84507, Bratislava, Slovakia.

Department of Physics Birla Institute of Technology, Mesra, Ranchi, 835215, Jharkhand, India.

出版信息

Heliyon. 2024 Apr 20;10(9):e30109. doi: 10.1016/j.heliyon.2024.e30109. eCollection 2024 May 15.

Abstract

In the current work we studied the structural, elastics, electrical, optical, thermoelectric, as well as spectroscopic limited maximum efficiency (SLME) of oxide based BaAsBO (B[bond, double bond]Nb, Ta) materials. All the calculations were performed using first-principles calculation by employing the WIEN2k code. We checked the stability in diverse forms such as optimization, phonon dispersion, mechanical, formation energy, cohesive energy, and thermal stability is computed. The semiconducting nature of these BaAsBO (B[bond, double bond]Nb, Ta) systems is revealed by calculating the direct band gap values are 1.97 eV and 1.49 eV respectively. Additionally, we determined the optical properties which analyze the utmost absorption and transition of carriers versus photon energy (eV). Moreover, BaAsNbO has an estimated SLME of 32 %, making it an encouraging alternative for single-junction solar cells. Lastly, we studied the transport properties against temperature, the chemical potential for p-type and n-type charge carriers at various temperatures. At 300 K, the zT values are found to be 0.757 and 0.751 for BaAsBO (B[bond, double bond]Nb, Ta) compounds respectively. Both materials were examined as having strong absorption patterns and an excellent figure of merit (ZT), indicating that materials are appropriate for daily life applications.

摘要

在当前工作中,我们研究了基于氧化物的BaAsBO(B═Nb、Ta)材料的结构、弹性、电学、光学、热电以及光谱极限最大效率(SLME)。所有计算均使用WIEN2k代码通过第一性原理计算进行。我们检查了多种形式的稳定性,如优化、声子色散、力学性能、形成能、内聚能,并计算了热稳定性。通过计算得出这些BaAsBO(B═Nb、Ta)体系的半导体性质,其直接带隙值分别为1.97 eV和1.49 eV。此外,我们确定了光学性质,分析了载流子相对于光子能量(eV)的最大吸收和跃迁。此外,BaAsNbO的估计SLME为32%,使其成为单结太阳能电池的一个有前景的替代材料。最后,我们研究了输运性质随温度的变化,以及不同温度下p型和n型电荷载流子的化学势。在300 K时,BaAsBO(B═Nb、Ta)化合物的zT值分别为0.757和0.751。这两种材料均表现出强吸收模式和优异的优值(ZT),表明这些材料适用于日常生活应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a4ca/11064438/8c74c194551e/gr1.jpg

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