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通过与铋共掺杂对CaGdSbO:Eu荧光粉中红色发光的调制与增强

Modulation and Enhancement of Red Luminescence in CaGdSbO: Eu Phosphor by Co-Doping with Bi.

作者信息

Li Jing, Hong Junhuang, Xu Yingchao, Liu Yue, Fan Haoshuang

机构信息

School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, Fujian, China.

Fujian Provincial Key Laboratory of Opto-electronics Technology and Devices, Xiamen, 361024, Fujian, China.

出版信息

J Fluoresc. 2025 May;35(5):3047-3059. doi: 10.1007/s10895-024-03731-8. Epub 2024 May 6.

Abstract

The double perovskite structure of CaGdSbO as a fluorescent phosphor matrix material possesses a stable structure, making it an excellent candidate for a matrix material. In this study, single-doped CaGdSbO: Eu fluorescent phosphors and Bi sensitized CaGdSbO: Eu, Bi fluorescent phosphor materials were synthesized using the high-temperature solid-state method. The luminescence of this phosphor is based on the D→F transition emission of Eu ions, which occurs at 612 nm. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectra, high-temperature fluorescence spectra, and fluorescence decay lifetimes to study the phase structure, optical properties, crystal structure, and chemical purity of the samples. The performance of the single-doped phosphor was significantly improved by the addition of Bi sensitizer. The luminescence intensity increased by nearly 100% compared to CaGdSbO: Eu phosphor, with a quantum efficiency increase of 124%. The thermal quenching activation energy was found to be 0.299 eV, and the luminescence intensity remained at 70.3% of room temperature at 453 K. These results indicate that the co-doping of Bi has a modulation and enhancement effect on the luminescence of CaGdSbO: Eu red phosphor, showing great potential for application in near-ultraviolet-excited white LED devices.

摘要

作为荧光粉基质材料的CaGdSbO双钙钛矿结构具有稳定的结构,使其成为基质材料的理想候选者。在本研究中,采用高温固相法合成了单掺杂CaGdSbO:Eu荧光粉和Bi敏化的CaGdSbO:Eu,Bi荧光粉材料。该荧光粉的发光基于Eu离子的D→F跃迁发射,发生在612nm处。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光(PL)光谱、高温荧光光谱和荧光衰减寿命对样品进行表征,以研究样品的相结构、光学性质、晶体结构和化学纯度。添加Bi敏化剂显著提高了单掺杂荧光粉的性能。与CaGdSbO:Eu荧光粉相比,发光强度提高了近100%,量子效率提高了124%。发现热猝灭活化能为0.299eV,在453K时发光强度保持在室温的70.3%。这些结果表明,Bi的共掺杂对CaGdSbO:Eu红色荧光粉的发光具有调制和增强作用,在近紫外激发白光LED器件中显示出巨大的应用潜力。

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