Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education, School of Materials and Energy, Southwest University, Chongqing 400715, China.
Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China.
Talanta. 2024 Aug 15;276:126201. doi: 10.1016/j.talanta.2024.126201. Epub 2024 May 6.
Oblique-incidence reflectivity difference (OIRD) is a dielectric constant-sensitive technique and exhibits intriguing applications in label-free and high-throughput detection of protein microarrays. With the outstanding advantage of being compatible with arbitrary substrates, however, the effect of the substrate, particularly its dielectric constant on the OIRD sensitivity has not been fully disclosed. In this paper, for the first time we investigated the dependence of OIRD sensitivity on the dielectric constant of the substrate under top-incident OIRD configuration by combining theoretical modeling and experimental evaluation. Optical modeling suggested that the higher dielectric constant substrate exhibits a higher intrinsic sensitivity. Experimentally, three substrates including glass, fluorine-doped tin oxide (FTO) and silicon (Si) with different dielectric constants were selected as microarray substrates and their detection performances were evaluated. In good agreement with the modeling, high dielectric constant Si-based microarray exhibited the highest sensitivity among three chips, reaching a detection limit of as low as 5 ng mL with streptavidin as the model target. Quantification of captured targets on three chips with on-chip enzyme-linked immunosorbent assay (ELISA) further confirmed that the enhanced performance originates from the high dielectric constant enhanced intrinsic OIRD sensitivity. This work thus provides a new way to OIRD-based label-free microarrays with improved sensitivity.
斜入射反射率差(OIRD)是一种介电常数敏感技术,在无标记和高通量蛋白质微阵列检测方面具有诱人的应用。然而,由于其与任意衬底兼容的突出优势,衬底的影响,特别是其介电常数对 OIRD 灵敏度的影响尚未得到充分揭示。在本文中,我们首次通过理论建模和实验评估相结合,研究了在顶入射 OIRD 配置下 OIRD 灵敏度对衬底介电常数的依赖性。光学模型表明,高介电常数衬底表现出更高的固有灵敏度。实验中,选择了玻璃、掺氟氧化锡(FTO)和硅(Si)三种具有不同介电常数的衬底作为微阵列衬底,并评估了它们的检测性能。与模型非常吻合,基于高介电常数 Si 的微阵列在三种芯片中表现出最高的灵敏度,使用链霉亲和素作为模型靶标,检测限低至 5ng/mL。通过芯片上酶联免疫吸附测定(ELISA)对三种芯片上捕获的靶标进行定量,进一步证实了增强的性能源于高介电常数增强的固有 OIRD 灵敏度。因此,这项工作为基于 OIRD 的无标记微阵列提供了一种提高灵敏度的新方法。