Liu Ying, Wang Zixing, Li Jiajia, Zhang Mingcheng, Liu Yuexin, Han Xiaowen, Zuo Xinru, Cai Kefeng, Chen Lidong
Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Shanghai Key Laboratory of Development and Application for Metal-Functional Materials, School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China.
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
ACS Appl Mater Interfaces. 2024 May 22;16(20):26417-26427. doi: 10.1021/acsami.4c03756. Epub 2024 May 8.
Recent studies have shown that silver selenide is a promising thermoelectric material at room temperature. Herein, flexible films with a nominal composition of (AgCu)Se are prepared by a simple and efficient one-pot method combined with vacuum-assisted filtration and hot pressing. The thermoelectric properties of the films are regulated by both cationic doping and a dual-phase strategy via a wet chemical method. As the increases, not only Cu is doped into the AgSe, but different new phases (CuAgSe and/or CuSe) also appear. The (AgCu)Se film with = 0.02 composed of Cu-doped AgSe and CuAgSe shows a high PF of ∼2540 μW m K ( ∼ 0.90) and outstanding flexibility at room temperature. The high thermoelectric properties of the film are due to the effect of Cu doping and the CuAgSe phase, including the increase in electrical conductivity caused by doping, the enhanced phonon scattering at the AgSe/CuAgSe interface, and the interaction between the energy filtering effect and the doping effect. In addition to the high output performance (PD = 28.08 W m, Δ = 32.2 K), the flexible device assembled with the (AgCu)Se film also has potential applications as a temperature sensor.
最近的研究表明，硒化银是一种在室温下很有前景的热电材料。在此，通过一种简单高效的一锅法结合真空辅助过滤和热压制备了标称组成为(AgCu)Se的柔性薄膜。通过湿化学方法，利用阳离子掺杂和双相策略来调控薄膜的热电性能。随着[具体参数]的增加，不仅铜被掺杂到AgSe中，还出现了不同的新相（CuAgSe和/或CuSe）。[具体参数]=0.02的(AgCu)Se薄膜由铜掺杂的AgSe和CuAgSe组成，在室温下显示出约2540 μW m⁻¹ K⁻²的高功率因子（ZT≈0.90）和出色的柔韧性。该薄膜的高热电性能归因于铜掺杂和CuAgSe相的作用，包括掺杂导致的电导率增加、AgSe/CuAgSe界面处增强的声子散射以及能量过滤效应和掺杂效应之间的相互作用。除了高输出性能（PD = 28.08 W m⁻²，ΔT = 32.2 K）外，用(AgCu)Se薄膜组装的柔性器件还具有作为温度传感器的潜在应用。
