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基于硅上相变材料的圆柱形波导光开关的多物理场模拟。

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon.

作者信息

Malek Mohammad Alireza, Nikoufard Mahmoud, Abdolghaderi Senour

机构信息

Department of Electronics, Faculty of Electrical and Computer Engineering, University of Kashan, Kashan, 8731753153, Iran.

Nanoscience and Nanotechnology Research Center, University of Kashan, Kashan, 8731753153, Iran.

出版信息

Sci Rep. 2024 May 10;14(1):10730. doi: 10.1038/s41598-024-61473-w.

Abstract

This work presents the design and multiphysics simulation of a cylindrical waveguide-based optical switch using germanium-antimony-tellurium (GST) as an active phase change material. The innovative cylindrical architecture is theoretically analyzed and evaluated at 1550 nm wavelength for telecommunication applications. The dispersion relation is derived analytically for the first time to model the optical switch, while finite element method (FEM) and finite difference time domain (FDTD) techniques are utilized to simulate the optical modes, light propagation, and phase change dynamics. The fundamental TE and HE modes are studied in detail, enabling switching between low-loss amorphous and high-loss crystalline GST phases. Increasing the GST thickness is found to increase absorption loss in the crystalline state but also slows down phase transition kinetics, reducing switching speeds. A 10 nm GST layer results in competitive performance metrics of 0.79 dB insertion loss, 13.47 dB extinction ratio, 30 nJ average power consumption, and 3.5 Mb/s bit rate. The combined optical, thermal, and electrical simulation provides comprehensive insights towards developing integrated non-volatile photonic switches and modulators utilizing phase change materials.

摘要

本文介绍了一种基于圆柱形波导的光开关的设计与多物理场模拟,该光开关使用锗锑碲(GST)作为有源相变材料。对这种创新的圆柱形结构进行了理论分析,并在1550纳米波长下针对电信应用进行了评估。首次解析推导了色散关系以对光开关进行建模,同时利用有限元法(FEM)和时域有限差分(FDTD)技术来模拟光模式、光传播和相变动力学。详细研究了基本的TE模和HE模,实现了低损耗非晶态和高损耗晶态GST相之间的切换。发现增加GST厚度会增加晶态下的吸收损耗,但也会减缓相变动力学,降低开关速度。10纳米的GST层具有0.79分贝的插入损耗、13.47分贝的消光比、30纳焦的平均功耗和3.5兆比特/秒的比特率等具有竞争力的性能指标。光学、热学和电学的联合模拟为开发利用相变材料的集成非易失性光子开关和调制器提供了全面的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f2e1/11087545/b3a5074e9f09/41598_2024_61473_Fig1_HTML.jpg

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