Guo Jie, Xie Mingyuan, Li Hangren, Zhang Lin, Zhang Linxing, Zhang Xiaoyu, Zheng Weitao, Tian Jianjun
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
Key Laboratory of Automobile Materials Ministry of Education, School of Materials Science and Engineering, Jilin University, Changchun 130012, China.
Nano Lett. 2024 May 29;24(21):6410-6416. doi: 10.1021/acs.nanolett.4c01441. Epub 2024 May 20.
CsPbI perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy () and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K and I to bond to the surface of SQDs. The of the SQDs was decreased from 305 to 51 meV because of the attraction of K to electrons, meanwhile surface vacancies were passivated by K and I. The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m.
CsPbI钙钛矿量子点(QDs)可通过减小尺寸实现纯红色发射,但小尺寸量子点(SQDs)激子结合能()增加和表面缺陷导致严重的俄歇复合和陷阱复合,从而恶化其电致发光(EL)性能。在此,我们利用小尺寸量子点的悬空键作为驱动力加速KI溶解以解决其在非极性溶剂中的低溶解度,从而使K和I键合到小尺寸量子点表面。由于K对电子的吸引,小尺寸量子点的激子结合能从305 meV降至51 meV,同时表面空位被K和I钝化。这种双功能配体同时抑制了俄歇复合和陷阱复合。基于小尺寸量子点的发光二极管显示出639 nm的稳定纯红色EL峰、25.1%的低滚降外量子效率和5934 cd m的亮度。