Fedoruk-Piskorska Katarzyna, Zaręba Jan K, Zelewski Szymon J, Gągor Anna, Mączka Mirosław, Drobczyński Sławomir, Sieradzki Adam
Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
Institute of Advanced Materials, Faculty of Chemistry, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
ACS Appl Mater Interfaces. 2024 Jun 5;16(22):28829-28837. doi: 10.1021/acsami.4c03413. Epub 2024 May 22.
The phenomenon of dielectric switching has garnered considerable attention due to its potential applications in electronic and photonic devices. Typically, hybrid organic-inorganic perovskites, HOIPs, exhibit a binary (low-high) dielectric state transition, which, while useful, represents only the tip of the iceberg in terms of functional relevance. One way to boost the versatility of applications is the discovery of materials capable of nonbinary switching schemes, such as three-state dielectric switching. The ideal candidate for that task would exhibit a trio of attributes: two reversible, first-order phase transitions across three distinct crystal phases, minimal thermal hysteresis, and pronounced, step-like variations in dielectric permittivity, with a substantial change in its real part. Here, we demonstrate a one-dimensional lead halide perovskite with the formula (CH)C(H)NH)PbI, abbreviated as ISOPrPbI, that fulfills these criteria and demonstrates three-state dielectric switching within a narrow temperature range of ca. 45 K. Studies on ISOPrPbI also revealed the polar nature of the low-temperature phase III below 266 K through pyrocurrent experiments, and the noncentrosymmetric character of the intermediate phase II and low-temperature phase III is confirmed via second harmonic generation measurements. Additionally, luminescence studies of ISOPrPbI have demonstrated combined broadband and narrow emission properties. The introduction of ISOPrPbI as a three-state dielectric switch not only addresses the limitations posed by the wide thermal gap between dielectric states in previous materials but also opens new avenues for the development of nonbinary dielectric switchable materials.
介电开关现象因其在电子和光子器件中的潜在应用而备受关注。通常,有机-无机杂化钙钛矿(HOIPs)呈现二元(低-高)介电态转变,虽然这很有用,但就功能相关性而言,这仅仅是冰山一角。提高应用通用性的一种方法是发现能够实现非二元开关方案的材料,例如三态介电开关。完成这项任务的理想候选材料应具备三个属性:在三个不同晶相之间有两个可逆的一级相变、最小的热滞回以及在介电常数上有明显的阶梯状变化,且其实部有显著变化。在此,我们展示了一种化学式为(CH)C(H)NH)PbI的一维卤化铅钙钛矿,简称为ISOPrPbI,它满足这些标准,并在约45 K的窄温度范围内展示了三态介电开关特性。对ISOPrPbI的研究还通过热电流实验揭示了266 K以下低温相III的极性性质,并通过二次谐波产生测量证实了中间相II和低温相III的非中心对称特征。此外,对ISOPrPbI的发光研究表明其具有宽带和窄带发射特性。引入ISOPrPbI作为三态介电开关不仅解决了先前材料中介电态之间热隙宽所带来的限制,还为非二元介电可切换材料的发展开辟了新途径。