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SrHgGeOS:一种基于汞的氧硫族化物红外非线性光学材料,在大带隙和强二次谐波产生响应之间展现出良好的平衡。

SrHgGeOS: A Hg-Based Oxychalcogenide Infrared Nonlinear Optical Material Exhibiting Favorable Balance between a Large Band Gap and Strong Second Harmonic Generation Response.

作者信息

Wang Guili, Li Chunxiao, Lee Ming-Hsien, Yao Jiyong

机构信息

Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.

出版信息

Inorg Chem. 2024 Jun 3;63(22):10288-10295. doi: 10.1021/acs.inorgchem.4c00959. Epub 2024 May 23.

Abstract

Currently, oxychalcogenides with mixed-anion groups that integrate the property advantages of oxides (wide optical band gap) and chalcogenides [strong second harmonic generation (SHG) response] through chemical substitution engineering have attracted widespread interest and are considered to be important candidates for infrared (IR) nonlinear optical (NLO) materials. Herein, the first Hg-based oxychalcogenide SrHgGeOS with mixed anion [GeOS] units has been successfully synthesized through a spontaneous crystallization method, which exhibits a favorable balance between the strong SHG response (0.7 × AgGaS) and large optical band gap (2.9 eV). In addition, SrHgGeOS shows high laser-induced damage threshold (LIDT, 2.1 × AgGaS) as well as phase-matching (PM) performance. Theoretical calculations indicate that the SrHgGeOS encompasses large birefringence of 0.128@2090 nm (3.3 × AgGaS) and its SHG density mainly comes from [HgS] tetrahedra and [GeOS] units. This work not only demonstrates that SrHgGeOS is a promising IR NLO material but also provides new ideas for the exploration of Hg-based oxychalcogenide IR NLO materials.

摘要

目前,通过化学取代工程整合了氧化物(宽光学带隙)和硫属化物[强二次谐波产生(SHG)响应]性能优势的含混合阴离子基团的氧硫属化物引起了广泛关注,并被认为是红外(IR)非线性光学(NLO)材料的重要候选者。在此,通过自发结晶法成功合成了首例具有混合阴离子[GeOS]单元的汞基氧硫属化物SrHgGeOS,其在强SHG响应(0.7×AgGaS)和大光学带隙(2.9 eV)之间表现出良好的平衡。此外,SrHgGeOS还表现出高激光损伤阈值(LIDT,2.1×AgGaS)以及相位匹配(PM)性能。理论计算表明,SrHgGeOS在2090 nm处具有0.128的大双折射(3.3×AgGaS),其SHG密度主要来自[HgS]四面体和[GeOS]单元。这项工作不仅证明了SrHgGeOS是一种有前途的红外NLO材料,还为探索汞基氧硫属化物红外NLO材料提供了新思路。

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