Vighnesh Kunnathodi, Sergeev Aleksandr A, Hassan Md Samim, Portniagin Arsenii S, Sokolova Anastasiia V, Zhu Ding, Sergeeva Kseniia A, Kershaw Stephen V, Wong Kam Sing, Rogach Andrey L
Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China.
Department of Physics, Hong Kong University of Science and Technology, Kowloon, Hong Kong SAR, 999077, P. R. China.
Small. 2024 Oct;20(40):e2400745. doi: 10.1002/smll.202400745. Epub 2024 May 28.
Producing heterostructures of cesium lead halide perovskites and metal-chalcogenides in the form of colloidal nanocrystals can improve their optical features and stability, and also govern the recombination of charge carriers. Herein, the synthesis of red-emitting CsPbI/ZnSe nanoheterostructures is reported via an in situ hot injection method, which provides the crystallization conditions for both components, subsequently leading to heteroepitaxial growth. Steady-state absorption and photoluminescence studies alongside X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy analysis evidence on a type-I band alignment for CsPbI/ZnSe nanoheterostructures, which exhibit photoluminescence quantum yield of 96% due to the effective passivation of surface defects, and an enhancement in carrier lifetime. Furthermore, the heterostructure growth of ZnSe domains leads to significant improvement in the stability of the CsPbI nanocrystals under ambient conditions and against thermal and UV irradiation stress.
以胶体纳米晶体的形式制备铯铅卤化物钙钛矿和金属硫族化物的异质结构可以改善它们的光学特性和稳定性,还能控制电荷载流子的复合。在此,通过原位热注入法报道了红色发光的CsPbI/ZnSe纳米异质结构的合成,该方法为两种组分提供了结晶条件,随后导致异质外延生长。稳态吸收和光致发光研究以及X射线光电子能谱和紫外光电子能谱分析证明CsPbI/ZnSe纳米异质结构具有I型能带排列,由于表面缺陷的有效钝化,其光致发光量子产率为96%,并且载流子寿命有所提高。此外,ZnSe域的异质结构生长导致CsPbI纳米晶体在环境条件下以及在热和紫外线辐射应力下的稳定性有显著提高。