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二维XMgBi(X = Eu/Yb)中新型量子拓扑绝缘体状态的第一性原理预测

First principles prediction of novel quantum topological insulator state in two-dimensional XMgBi(X=Eu/Yb).

作者信息

Choudhury Amarjyoti, Maitra T

机构信息

Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India.

出版信息

J Phys Condens Matter. 2024 Jun 17;36(37). doi: 10.1088/1361-648X/ad5261.

DOI:10.1088/1361-648X/ad5261
PMID:38815601
Abstract

Topological insulator (TIs), a novel quantum state of materials, has a lot of significance in the development of low-power electronic equipments as the conducting edge states display exceptional endurance against back-scattering. The absence of suitable materials with high fabrication feasibility and significant nontrivial bandgap, is now the biggest hurdle in their potential applications in devices. Here, we illustrate using first principles density functional calculations that the quintuplet layers of EuMgBiand YbMgBicrystals are potential two-dimensional TIs with a sizeable nontrivial gaps of 72 meV and 147 meV respectively. Dynamical stability of these quintuplet layers of EuMgBiand YbMgBiis confirmed by our phonon calculations. The weakly coupled layered structure of parent compounds makes it possible for simple exfoliation from a three-dimensional structure. We observed gapless edge states inside the bulk band gap in both the systems which indicate their TI nature. Further, we observed the anomalous and spin Hall conductivities to be quantized in two dimensional EuMgBiand YbMgBirespectively. Our findings predict two viable candidate materials as two dimensional quantum TIs which can be explored by future experimental investigations and possible applications of quantized spin and anomalous Hall conductance in spintronics.

摘要

拓扑绝缘体(TIs)作为一种新型的材料量子态,在低功耗电子设备的发展中具有重要意义,因为其导电边缘态对背散射具有非凡的耐受性。目前,缺乏具有高制备可行性和显著非平凡带隙的合适材料,是其在器件中潜在应用的最大障碍。在此,我们通过第一性原理密度泛函计算表明,EuMgBi和YbMgBi晶体的五重层是潜在的二维拓扑绝缘体,其非平凡带隙分别为72meV和147meV。我们的声子计算证实了EuMgBi和YbMgBi这些五重层的动力学稳定性。母体化合物的弱耦合层状结构使得从三维结构进行简单剥离成为可能。我们在这两个系统的体能带隙内都观察到了无隙边缘态,这表明了它们的拓扑绝缘体性质。此外,我们分别在二维EuMgBi和YbMgBi中观察到反常霍尔电导率和自旋霍尔电导率被量子化。我们的研究结果预测了两种可行的二维量子拓扑绝缘体候选材料,未来的实验研究可以对其进行探索,并有望将量子化自旋和反常霍尔电导应用于自旋电子学中。

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