Liu Zhe, Ma Long, Zhang Hongwen, Zhuang Jiakun, Man Jia, Siwy Zuzanna S, Qiu Yinghua
Key Laboratory of High Efficiency and Clean Mechanical Manufacture of Ministry of Education, National Demonstration Center for Experimental Mechanical Engineering Education, School of Mechanical Engineering, Shandong University, Jinan 250061, China.
Shenzhen Research Institute of Shandong University, Shenzhen 518000, China.
ACS Appl Mater Interfaces. 2024 Jun 12;16(23):30496-30505. doi: 10.1021/acsami.4c02078. Epub 2024 Jun 3.
Ionic current rectification (ICR) of charged conical nanopores has various applications in fields including nanofluidics, biosensing, and energy conversion, whose function is closely related to the dynamic response of nanopores. The occurrence of ICR originates from the ion enrichment and depletion in conical pores, whose formation is found to be affected by the scanning rate of voltages. Here, through time-dependent simulations, we investigate the variation of ion current under electric fields and the dynamic formation of ion enrichment and depletion, which can reflect the response time of conical nanopores. The response time of nanopores when ion enrichment forms, i.e., at the "on" state is significantly longer than that with the formation of ion depletion, i.e., at the "off" state. Our simulation results reveal the regulation of response time by different nanopore parameters including the surface charge density, pore length, tip, and base radius, as well as the applied conditions such as the voltage and bulk concentration. The response time of nanopores is closely related to the surface charge density, pore length, voltage, and bulk concentration. Our uncovered dynamic response mechanism of the ionic current can guide the design of nanofluidic devices with conical nanopores, including memristors, ionic switches, and rectifiers.
带电锥形纳米孔的离子电流整流(ICR)在纳米流体、生物传感和能量转换等领域有多种应用,其功能与纳米孔的动态响应密切相关。ICR的出现源于锥形孔中的离子富集和耗尽,发现其形成受电压扫描速率的影响。在此,通过时间相关模拟,我们研究电场下离子电流的变化以及离子富集和耗尽的动态形成,这可以反映锥形纳米孔的响应时间。离子富集形成时,即处于“开”状态时纳米孔的响应时间明显长于离子耗尽形成时,即处于“关”状态时的响应时间。我们的模拟结果揭示了不同纳米孔参数(包括表面电荷密度、孔长度、尖端和基部半径)以及诸如电压和本体浓度等应用条件对响应时间的调节作用。纳米孔的响应时间与表面电荷密度、孔长度、电压和本体浓度密切相关。我们所揭示的离子电流动态响应机制可以指导具有锥形纳米孔的纳米流体器件的设计,包括忆阻器、离子开关和整流器。