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单分子一维拓扑绝缘体中的远程门控

Long-Range Gating in Single-Molecule One-Dimensional Topological Insulators.

作者信息

Li Liang, Louie Shayan, Orchanian Nicholas M, Nuckolls Colin, Venkataraman Latha

机构信息

Department of Chemistry, Columbia University, New York, New York 10027, United States.

Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States.

出版信息

J Am Chem Soc. 2024 Jun 4. doi: 10.1021/jacs.4c05699.

Abstract

Single-molecule one-dimensional topological insulator (1D TI) is a class of molecular wires that exhibit increasing conductance with wire length. This unique trend is due to the coupling between the two low-lying topological edge states of 1D TIs described by the Su-Schrieffer-Heeger model. In principle, this quantum phenomenon within 1D TIs can be utilized to achieve long-range gating in molecular conductors. Here, we study electron transport through a single-edge state of doubly oxidized oligophenylene bis(triarylamine) to understand the effect of the edge state coupling on conductance. We find that conductance is elevated by approximately 1 order of magnitude compared to a control molecule with the same conductance pathway. Density function theory calculations further support that the increase in conductance is due to the interaction between the edge states of 1D TIs. This work demonstrates a new gating paradigm in molecular electronics, while also providing a deeper understanding of how edge states interact and affect electron transport within 1D TIs.

摘要

单分子一维拓扑绝缘体(1D TI)是一类分子导线,其电导随导线长度增加而增大。这种独特的趋势归因于由Su-Schrieffer-Heeger模型描述的1D TI的两个低能拓扑边缘态之间的耦合。原则上,1D TI内的这种量子现象可用于实现分子导体中的远程门控。在这里,我们研究通过双氧化寡聚亚苯基双(三芳基胺)的单边缘态的电子输运,以了解边缘态耦合对电导的影响。我们发现,与具有相同电导路径的对照分子相比,电导提高了约1个数量级。密度泛函理论计算进一步支持电导的增加是由于1D TI边缘态之间的相互作用。这项工作展示了分子电子学中的一种新的门控范式,同时也更深入地理解了边缘态如何相互作用以及如何影响1D TI内的电子输运。

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