Bukhtiar Arfan, Bao Ke, Khan Muhammad Sheraz, Liang Weizheng, Sulaman Muhammad, Imran Ali, Yao Shangfei, Zou Bingsuo
School of Physical Science and Technology, Guangxi University, Nanning 530004, People's Republic of China.
Opto-electronics Research Center, School of Science, Minzu University of China, Beijing 100081, People's Republic of China.
Nanotechnology. 2024 Jul 15;35(39). doi: 10.1088/1361-6528/ad544c.
Transition metal (TM) ion doping in II-VI semiconductors can produce exciton magnetic polarons (EMPs) and localized EMPs containing longitudinal optical (LO) phonon coupling, which will be discussed in this paper. TM ion doping in II-VI semiconductors for a dilute magnetic semiconductor show emission via magnetic polarons (MPs) together with hot carrier effects that need to be understood via its optical properties. The high excitation power that is responsible for hot carrier effects suppresses the charge trapping effect in low exciton binding energy (8.12 meV) semiconductors, even at room temperature (RT). The large polaron radius exhibits strong interaction between the carrier and MP, resulting in anharmonicity effects, in which the side-band energy overtone to LO phonons. The photon-like polaritons exhibit polarized spin interactions with LO phonons that show strong spin-phonon polaritons at RT. The temperature-dependent photoluminescence spectra of Ni-doped ZnTe show free excitons (FX) and FXs interacting with 2LO phonon-spin interactions, corresponding toT(F) →T(G) and EMP peaks with ferromagnetically coupled Ni ions atT(F) →E(G). In addition, other d-d transitions of single Ni ions (600-900 nm) appear at the low-energy side. RT energy shifts of 14-38 meV are observed due to localized states with density-of-states tails extending far into the bandgap-related spin-induced localization at the valence band. These results show spin-spin magnetic coupling and spin-phonon interactions at RT that open up a more realistic new horizon of optically controlled dilute magnetic semiconductor applications.
在II-VI族半导体中掺杂过渡金属（TM）离子可产生激子磁极化子（EMP）以及包含纵向光学（LO）声子耦合的局域化EMP，本文将对此进行讨论。在II-VI族半导体中掺杂TM离子以制备稀磁半导体，其通过磁极化子（MP）发光，并伴随热载流子效应，需要通过其光学性质来理解。即使在室温（RT）下，导致热载流子效应的高激发功率也会抑制低激子结合能（8.12 meV）半导体中的电荷俘获效应。大极化子半径表现出载流子与MP之间的强相互作用，从而产生非谐效应，其中边带能量泛频至LO声子。类光子极化子与LO声子表现出极化自旋相互作用，在室温下呈现出强自旋-声子极化子。掺镍碲化锌的温度依赖光致发光光谱显示了自由激子（FX）以及与2LO声子-自旋相互作用的FX，对应于T(F) →T(G)以及在T(F) →E(G)时具有铁磁耦合镍离子的EMP峰。此外，单个镍离子的其他d-d跃迁（600-900 nm）出现在低能量侧。由于具有延伸到价带中与带隙相关的自旋诱导局域化的态密度尾部的局域态，观察到了14-38 meV的室温能量位移。这些结果表明了室温下的自旋-自旋磁耦合和自旋-声子相互作用，为光控稀磁半导体应用开辟了一个更现实的新视野。
