Lee Ang, Zhao Nengyang, Liu Chenyang, Wang Ruxue, Ding Yanyue, Qiu Chao, Wu Aimin
Appl Opt. 2024 Apr 20;63(12):3299-3303. doi: 10.1364/AO.517169.
Integration of resonators impacts the utilization of the 3-µm-thick silicon-on-insulator (SOI) platform in photonics integrated circuits (PICs). We propose an integrated resonator leveraging a deep-etch silicon waveguide. Through the utilization of a tunable coupler based on multimode interferometers (MMIs), the resonator achieves high fabrication tolerance and reconfigurability. In a critical-coupling state, it serves as a filter with an extinction ratio (ER) of 23.5 dB and quality () factor of 3.1×10, operating within the range of 1530-1570 nm. In an extreme over-coupling state, it functions as a large-bandwidth delay line, offering continuous change in delay time of 22 ps, nearly wavelength-independent. This work provides devices to the 3-µm-thick silicon photonics device library, enriching the potential applications of this technology platform.
谐振器的集成影响了3微米厚的绝缘体上硅(SOI)平台在光子集成电路(PIC)中的应用。我们提出了一种利用深蚀刻硅波导的集成谐振器。通过使用基于多模干涉仪(MMI)的可调耦合器,该谐振器实现了高制造容差和可重构性。在临界耦合状态下,它用作消光比(ER)为23.5 dB、品质()因数为3.1×10的滤波器,工作在1530 - 1570 nm范围内。在极端过耦合状态下,它用作大带宽延迟线,提供22 ps的延迟时间连续变化,几乎与波长无关。这项工作为3微米厚的硅光子器件库提供了器件,丰富了该技术平台的潜在应用。