Meziani Sofiane, Jaafar Abdallah, Hammouti Abdelali, Bodiou Loïc, Lorrain Nathalie, Pirasteh Parastesh, Courson Rémi, Lemaitre Jonathan, Nazabal Virginie, Guendouz Mohammed, Charrier Joël
Opt Express. 2024 Apr 8;32(8):13628-13639. doi: 10.1364/OE.516923.
A mid-infrared (mid-IR) porous silicon (PSi) waveguide gas sensor was fabricated. PSi guiding and confinement layers were prepared by electrochemical anodization. Ridge waveguides were patterned using standard i-line photolithography and reactive ion etching. Due to the open pores, light and gas molecules interact in the inside volume, unlike bulk material in which the interaction takes place with the evanescent part of the light. Propagation losses are measured for a wavelength range spanning from λ = 3.9 to 4.55 µm with a value of 11.4 dB/cm at λ = 4.28 µm. The influence of native oxidation and ageing on the propagation losses was investigated. Limit of detection (LoD) of 1000 ppm is obtained with the waveguide sensor at the carbon dioxide (CO) absorption peak at λ = 4.28 µm.
制备了一种中红外(mid-IR)多孔硅(PSi)波导气体传感器。通过电化学阳极氧化制备PSi波导层和限制层。采用标准的i线光刻和反应离子刻蚀工艺制作脊形波导。由于存在开放孔,光与气体分子在内部体积中相互作用,这与块状材料中光与消逝部分相互作用的情况不同。在波长范围λ = 3.9至4.55 µm内测量了传播损耗,在λ = 4.28 µm时传播损耗值为11.4 dB/cm。研究了自然氧化和老化对传播损耗的影响。在λ = 4.28 µm的二氧化碳(CO)吸收峰处,该波导传感器获得了1000 ppm的检测限(LoD)。