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单层WSe介电函数和临界点的温度依赖性

Temperature dependence of the dielectric function and critical points of monolayer WSe.

作者信息

Nguyen Xuan Au, Le Long V, Kim Suk Hyun, Kim Young Duck, Diware Mangesh S, Kim Tae Jung, Kim Young Dong

机构信息

Department of Physics, Kyung Hee University, Seoul, 02447, Republic of Korea.

Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, 100000, Vietnam.

出版信息

Sci Rep. 2024 Jun 12;14(1):13486. doi: 10.1038/s41598-024-64303-1.

Abstract

Monolayer materials typically display intriguing temperature-dependent dielectric and optical properties, which are crucial for improving the structure and functionality of associated devices. Due to its unique photoelectric capabilities, monolayer WSe has recently received a lot of attention in the fields of atomically thin electronics and optoelectronics. In this work, we focus on the evolution of the temperature-dependent dielectric function (ε = ε + i ε) of monolayer WSe over energies from 0.74 to 6.40 eV and temperatures from 40 to 350 K. We analyze the second derivatives of ε with respect to energy to accurately locate the critical points (CP). The dependence of the observed CP energies on temperature is consistent with the alternative domination of the declining exciton binding energy as the temperature increases.

摘要

单层材料通常表现出有趣的温度依赖性介电和光学特性,这对于改善相关器件的结构和功能至关重要。由于其独特的光电能力,单层WSe最近在原子级薄电子学和光电子学领域受到了广泛关注。在这项工作中,我们专注于单层WSe在0.74至6.40电子伏特能量范围和40至350开尔文温度范围内温度依赖性介电函数(ε = ε + iε)的演变。我们分析ε相对于能量的二阶导数以准确确定临界点(CP)。观察到的CP能量对温度的依赖性与随着温度升高激子结合能下降的交替主导一致。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3b15/11169377/44b9ae566201/41598_2024_64303_Fig1_HTML.jpg

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