Wang Na, Xu Ze-Jiang, Ni Hao-Fei, Luo Wang, Li Hua-Kai, Ren Mei-Ling, Shi Chao, Ye Heng-Yun, Fu Xiao-Bin, Zhang Yi, Miao Le-Ping
Chaotic Matter Science Research Center, Jiangxi Province Key Laboratory of Functional Crystalline Materials Chemistry, International Institute for Innovation, Jiangxi, University of Science and Technology, Ganzhou, 341000, P.R. China.
Institute for Science and Applications of Molecular Ferroelectrics, Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, 321004, P.R. China.
Angew Chem Int Ed Engl. 2024 Sep 23;63(39):e202409796. doi: 10.1002/anie.202409796. Epub 2024 Aug 20.
Out-of-plane polarization is a highly desired property of two-dimensional (2D) ferroelectrics for application in vertical sandwich-type photoferroelectric devices, especially in ultrathin ferroelectronic devices. Nevertheless, despite great advances that have been made in recent years, out-of-plane polarization remains unrealized in the 2D hybrid double perovskite ferroelectric family. Here, from our previous work 2D hybrid double perovskite HQERN ((S3HQ)EuRb(NO), S3HQ=S-3-hydroxylquinuclidinium), we designed a molecular strategy of F-substitution on organic component to successfully obtain FQERN ((S3FQ)EuRb(NO), S3FQ=S-3-fluoroquinuclidinium) showing circularly polarized luminescence (CPL) response. Remarkably, compared to the monopolar axis ferroelectric HQERN, FQERN not only shows multiferroicity with the coexistence of multipolar axis ferroelectricity and ferroelasticity but also realizes out-of-plane ferroelectric polarization and a dramatic enhancement of Curie temperature of 94 K. This is mainly due to the introduction of F-substituted organic cations, which leads to a change in orientation and a reduction in crystal lattice void occupancy. Our study demonstrates that F-substitution is an efficient strategy to realize and optimize ferroelectric functional characteristics, giving more possibility of 2D ferroelectric materials for applications in micro-nano optoelectronic devices.
面外极化是二维铁电体在垂直三明治型光铁电器件,特别是超薄铁电器件应用中非常理想的特性。然而,尽管近年来取得了巨大进展,但二维混合双钙钛矿铁电体家族中仍未实现面外极化。在这里,基于我们之前的工作二维混合双钙钛矿HQERN((S3HQ)EuRb(NO),S3HQ = S - 3 - 羟基奎宁环),我们设计了一种在有机组分上进行F取代的分子策略,成功获得了显示圆偏振发光(CPL)响应的FQERN((S3FQ)EuRb(NO),S3FQ = S - 3 - 氟奎宁环)。值得注意的是,与单极轴铁电体HQERN相比,FQERN不仅表现出多铁性,同时存在多极轴铁电性和铁弹性,而且实现了面外铁电极化,并将居里温度显著提高了94 K。这主要归因于F取代有机阳离子的引入,导致了取向变化和晶格空位占有率降低。我们的研究表明,F取代是实现和优化铁电功能特性的有效策略,为二维铁电材料在微纳光电器件中的应用提供了更多可能性。