Sun Rui, Jia Yuping, Lai Bo, Shi Zhiming, Liu Mingrui, Yu Weili, Jiang Ke, Zhang Shanli, Lv Shunpeng, Chen Yang, Sun Xiaojuan, Li Dabing
Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
University of Chinese Academy of Sciences, Beijing, China.
Light Sci Appl. 2025 Jun 30;14(1):228. doi: 10.1038/s41377-025-01874-2.
Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D perovskite films contain multiple quantum wells with random width distribution, which degrade optoelectronic properties and spontaneous polarization. Here, we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr, which effectively controls crystallization kinetics and restricts the nucleation of high n-phases, producing high-quality films. The resulting (BA)CsPbBr (BA = CHNH) film demonstrates ferroelectric hysteresis behavior, clear in-plane ferroelectric domain switching, and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly, we observed a nonvolatile, reversible in situ photoluminescence (PL) modulation of Mn in this ferroelectric MHP film under an applied electric field, attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications.
准二维（quasi-2D）金属卤化物钙钛矿（MHP）铁电体具有自发极化和半导体特性，有望用于光存储和内存计算等应用中的功能性光铁电体。然而，典型的准二维钙钛矿薄膜包含多个具有随机宽度分布的量子阱，这会降低光电性能和自发极化。在此，我们通过引入无机盐MnBr引入具有均匀阱宽的纯相量子阱，其有效控制结晶动力学并限制高n相的成核，从而制备出高质量薄膜。所得的（BA）CsPbBr（BA = CHNH）薄膜表现出铁电滞回行为、清晰的面内铁电畴切换以及88.7%的高光致发光量子效率（PLQE）。值得注意的是，我们在施加电场下观察到该铁电MHP薄膜中Mn的非易失性、可逆原位光致发光（PL）调制，这归因于铁电极化取向引起的晶格畸变。这些发现促成了一个由氮化镓（GaN）发光二极管（LED）和铁电薄膜组成的简单系统的开发，以实现多态信号编码和逻辑与门。这项工作推动了高效铁电MHP薄膜的制备，并突出了它们在先进光电应用中的潜力。
