Department of Physics, Indian Institute of Technology, Patna 801103, India.
ACS Appl Bio Mater. 2024 Aug 19;7(8):5147-5157. doi: 10.1021/acsabm.4c00085. Epub 2024 Jul 8.
Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current-voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.
基于有机材料的生物电子非易失性存储器件由于其环境兼容性、简单的制造工艺、良好的可扩展性、低成本、低功耗以及许多其他优点,最近受到了广泛关注。阻变随机存取存储器(RRAM)器件基于电阻开关原理工作,有望应用于存储和神经形态计算。在这里,我们使用天然有机生长的橙皮提取出生物相容性果胶,设计了一种基于阻变的 Ag/果胶/铟锡氧化物(ITO)结构的记忆器件,并在 10K 到 300K 的温度范围内研究了其性能。微观结构分析揭示了表面纹理和各层的厚度。在 1000 次连续开关循环中进行的忆阻电流-电压特性测试表明,该器件具有可持续的双极性阻变开关行为和高导通/关断比。阻变行为的基本原理是基于在电极之间形成导电细丝,这在本工作中得到了解释。此外,我们还设计了一个 2×2 的 RRAM 器件交叉阵列,以演示用于神经形态计算的各种逻辑电路操作。这种器件具有稳健的开关特性,有望用于设计环保型生物电子存储应用和内存计算。