Kim Jihyung, Park Jongmin, Kim Sungjun
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Materials (Basel). 2022 Oct 15;15(20):7185. doi: 10.3390/ma15207185.
In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO/ITO capacitor structure and incorporated DC-sputtered WO as the switching layer between the two ITO electrodes. The device shows approximately 77% (including the glass substrate) of optical transmittance in visible light and exhibits reliable bipolar switching behavior. The current-voltage (I-V) curve is divided into two types: partial and full curves affected by the magnitude of the positive voltage during the reset process. In the partial curve, we confirmed that the retention could be maintained for more than 10 s and the endurance for more than 300 cycles could be stably secured. The switching mechanism based on the formation/rupture of the filament is further explained through the extra oxygen vacancies provided by the ITO electrodes. Finally, we examined the responsive potentiation and depression to check the synaptic characteristics of the device. We believe that the transparent WO-based RRAM could be a milestone for neuromorphic devices as well as future non-volatile transparent memory.
在这项工作中，我们评估了基于氧化铟锡（ITO）电极的全透明电阻式随机存取存储器（T-RRAM）器件的电阻开关（RS）和突触特性。在此，我们制备了ITO/WO/ITO电容结构，并将直流溅射的WO作为两个ITO电极之间的开关层。该器件在可见光下显示出约77%（包括玻璃基板）的透光率，并表现出可靠的双极开关行为。电流-电压（I-V）曲线分为两种类型：部分曲线和全曲线，这取决于复位过程中正向电压的大小。在部分曲线中，我们证实保持时间可以维持超过10秒，并且可以稳定确保超过300次循环的耐久性。基于细丝形成/断裂的开关机制通过ITO电极提供的额外氧空位进一步解释。最后，我们检查了响应增强和抑制以检验该器件的突触特性。我们认为基于WO的透明RRAM可能成为神经形态器件以及未来非易失性透明存储器的一个里程碑。
