Ahmed Mohammad Tanvir, Roy Debashis, Roman Abdullah Al, Islam Shariful, Ahmed Farid
Department of Physics, Jashore University of Science and Technology, Jashore7408, Bangladesh.
Department of Physics, Jahangirnagar University, Dhaka 1342, Bangladesh.
Langmuir. 2024 Jul 23;40(29):15332-15352. doi: 10.1021/acs.langmuir.4c02133. Epub 2024 Jul 12.
This study focuses on the geometrical, electronic, and optical properties of the γ-graphyne-like novel γ-SiC nanoflake of the γ-silicon carbide (SiC) monolayer using density functional theory calculations. γ-SiC was revealed to be a stable semiconducting nanoflake confirmed by a negative cohesive energy, real vibrational frequencies, and a 1.749 eV energy gap. The adsorption of COCl, HCN, PH, AsH, CNCl, and CN toxic gases on the γ-SiC nanoflake is also studied, which revealed an attractive gas-nanoflake interaction with the adsorption energy ranging from -0.21 to -0.38 eV. The adsorption results in a significant charge transfer between gas-adsorbent complexes. A significant variation in the energy gap and electrical conductivity was observed due to gas adsorption. γ-SiC showed maximum sensitivity at room temperature for CNCl gas. The entire process of adsorption is exothermic and thermodynamically stable. γ-SiC showed a high absorption coefficient over 10 orders with a significant variation in the absorption peak intensity and blue peak shifting. According to the quantum theory and reduced density gradient analysis, all of the gases are physisorbed on the γ-SiC nanoflake due to van der Waals interactions. The obtained results signify the usability of γ-SiC as a potential toxic gas sensor.
本研究利用密度泛函理论计算,聚焦于γ-碳化硅(SiC)单层中类γ-石墨炔新型γ-SiC纳米片的几何、电子和光学性质。通过负内聚能、实振动频率和1.749 eV的能隙证实,γ-SiC是一种稳定的半导体纳米片。还研究了COCl、HCN、PH、AsH、CNCl和CN等有毒气体在γ-SiC纳米片上的吸附情况,结果表明气体与纳米片之间存在吸引力相互作用,吸附能在-0.21至-0.38 eV之间。吸附导致气体-吸附剂络合物之间发生显著的电荷转移。由于气体吸附,能隙和电导率出现显著变化。γ-SiC在室温下对CNCl气体表现出最大灵敏度。整个吸附过程是放热的且热力学稳定。γ-SiC显示出超过10个数量级的高吸收系数,吸收峰强度和蓝移有显著变化。根据量子理论和约化密度梯度分析,所有气体由于范德华相互作用物理吸附在γ-SiC纳米片上。所得结果表明γ-SiC作为潜在有毒气体传感器的可用性。