Wu Chang-Feng, Kubendhiran Subbiramaniyan, Chung Ren-Jei, Kongvarhodom Chutima, Husain Sadang, Yougbaré Sibidou, Chen Hung-Ming, Wu Yung-Fu, Lin Lu-Yin
Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, Taiwan.
Department of Chemical Engineering, King Mongkut's University of Technology Thonburi, 126 Pracha-u-thit, Toong-kru, Bangkok 10140, Thailand; Department of Chemical Engineering, University of New Brunswick, Fredericton, New Brunswick E3B5A3, Canada.
J Colloid Interface Sci. 2024 Dec;675:792-805. doi: 10.1016/j.jcis.2024.07.070. Epub 2024 Jul 9.
Sodium-ion battery (SIB) is one of potential alternatives to lithium-ion battery, because of abundant resources and lower price of sodium. High electrical conductivity and long-term durability of MXene are advantageous as the anode material of SIB, but low energy density restricts applications. Tin phosphide possesses high theoretical capacity, low redox potential, and large energy density, but volume expansion reduces its cycling stability. In this study, tin phosphide particles are in-situ encapsulated into MXene conductive networks (SnP/MXene) by hydrothermal and phosphorization processes as novel anode materials of SIB. MXene amounts and hydrothermal durations are investigated to evenly distribute SnP in MXene. After 100 cycles, SnP/MXene reaches high specific capacities of 438.8 and 314.1 mAh/g at 0.2 and 1.0 A/g, respectively. The capacity retentions of 6.0% and 73.6% at 0.2 A/g are respectively obtained by SnP and SnP/MXene. The better specific capacity and cycling stability of SnP/MXene are attributed to less volume expansion of SnP during charge/discharge processes and relieved self-stacking of MXene by encapsulating SnP particles between MXene layers. Electrochemical impedance spectroscopy and Galvanostatic intermittent titration technique are also applied to analyze the charge storage mechanism in SIB. Higher sodium ion diffusion coefficient and smaller charge-transfer resistance are obtained by SnP/MXene.