Dantas Filho Reinaldo V, de Queiroz Thiago B
Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, Av. dos Estados 5001, 09510-580 Santo André-SP, Brazil.
J Chem Phys. 2024 Jul 21;161(3). doi: 10.1063/5.0213688.
The description of electronic properties of low bandgap molecular system is often performed by using density functional theory (DFT) and time dependent (TD) DFT calculations with the optimally tuned range-separated hybrid (OT-RSH) functional, as it contains the necessary ingredients to reliably predict charge transfer excitations. However, the range separating parameter (ω) is system-dependent and its optimization, including the chemical environment, is intricate. Refaely-Abramson et al. demonstrated that the gap renormalization in molecular crystals, a ground state property, can be represented by an OT-RSH functional screened by ɛstatic [Phys. Rev. B 88, 081204(R) (2013)], the zero frequency scalar dielectric constant. In this study, we propose the use of an OT-RSH functional screened by the scalar dielectric constant in the high frequency limit (OT-sRSH), ɛ∞, an appropriate constraint for vertical ionization energies or excitations in a dielectric environment. We have performed calculations for S,N-heteroacene derivatives in tetrahydrofuran and dichloromethane. The "unscreened" OT-RSH functional tends to underestimate experimental ionization potentials (IPs) and optical gaps (Egs) by up to 1.5 and 0.5 eV, respectively. In contrast, OT-sRSH functional calculations underestimate IPs and Egs by only 0.4 and 0.2 eV. We also compared the OT-sRSH results to explicitly solvated OT-RSH functional calculations for oligothiophenes in dioxane, benzene in ammonia, and methylene blue in water. We observe that both the approaches perform similarly for weakly interacting intermolecular systems and deviate for solvent-solute interacting systems, as expected. In conclusion, the OT-sRSH functional can describe molecular systems with environmental polarization effects accurately, a step toward describing realistic molecular systems.
低带隙分子体系的电子性质描述通常采用密度泛函理论(DFT)和含时(TD)DFT计算,并结合最优调谐的范围分离杂化(OT-RSH)泛函,因为它包含可靠预测电荷转移激发所需的要素。然而,范围分离参数(ω)依赖于体系,其优化(包括化学环境)很复杂。Refaely-Abramson等人证明,分子晶体中的能隙重整化(一种基态性质)可以用由静态介电常数ɛ[《物理评论B》88, 081204(R) (2013)]筛选的OT-RSH泛函来表示,ɛ是零频标量介电常数。在本研究中,我们提议使用在高频极限下由标量介电常数ɛ∞筛选的OT-RSH泛函(OT-sRSH),这是对介电环境中垂直电离能或激发的一个合适约束。我们对四氢呋喃和二氯甲烷中的S,N-并苯衍生物进行了计算。“未筛选”的OT-RSH泛函往往分别将实验电离势(IPs)和光学能隙(Egs)低估多达1.5和0.5 eV。相比之下,OT-sRSH泛函计算仅将IPs和Egs低估0.4和0.2 eV。我们还将OT-sRSH结果与对二恶烷中的寡聚噻吩、氨中的苯和水中的亚甲蓝进行的显式溶剂化OT-RSH泛函计算进行了比较。我们观察到,正如预期的那样,这两种方法在弱相互作用的分子间体系中表现相似,而在溶剂-溶质相互作用体系中则有所偏差。总之,OT-sRSH泛函能够准确描述具有环境极化效应的分子体系,这是迈向描述现实分子体系的重要一步。