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基于供体-受体结构的氟化二维聚合物薄膜用于神经形态计算的多级存储器件的合理设计

Rational Design of Fluorinated 2D Polymer Film Based on Donor-Accepter Architecture toward Multilevel Memory Device for Neuromorphic Computing.

作者信息

Liu Lei, Ji Wenyan, He Weixin, Cheng Yuanzhe, Hao Ruisha, Hao Pengyuan, Dong Huanli, Ding Xuesong, Lei Shengbin, Han Baohang, Hu Wenping

机构信息

Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China.

Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institution of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.

出版信息

Adv Mater. 2024 Sep;36(36):e2405328. doi: 10.1002/adma.202405328. Epub 2024 Jul 17.

Abstract

Fluorine-containing 2D polymer (F-2DP) film is a desired system to regulate the charge transport in organic electronics but rather rarely reports due to the limited fluorine-containing building blocks and difficulties in synthesis. Herein, a novel polar molecule with antiparallel columnar stacking is synthesized and further embedded into an F-2DP system to control over the crystallinity of F-2DP film through self-complementary π-electronic forces. The donor-accepter-accepter'-donor' (D-A-A'-D') structure regulates the charge transportation efficiently, inducing multilevel memory behavior through stepwise charge capture and transfer processes. Thus, the device exhibits ternary memory behavior with low threshold voltage (V of 1.1 V, V of 2.0 V), clearly distinguishable resistance states (1:10:10) and ternary yield (83%). Furthermore, the stepwise formation of the charge complex endows the device with a wider range to regulate the conductive state, which allows its application in brain-inspired neuromorphic computing. Modified National Institute of Standards and Technology recognition can reach an accuracy of 86%, showing great potential in neuromorphic computing applications in the post-Moore era.

摘要

含氟二维聚合物(F-2DP)薄膜是调控有机电子学中电荷传输的理想体系,但由于含氟结构单元有限以及合成困难,相关报道较少。在此,合成了一种具有反平行柱状堆积的新型极性分子,并将其进一步嵌入F-2DP体系,通过自互补π电子力控制F-2DP薄膜的结晶度。供体-受体-受体'-供体'(D-A-A'-D')结构有效地调节了电荷传输,通过逐步的电荷捕获和转移过程诱导出多级存储行为。因此,该器件表现出具有低阈值电压(1.1 V、2.0 V)、明显可区分的电阻状态(1:10:10)和三元产率(83%)的三元存储行为。此外,电荷复合物的逐步形成赋予器件更宽的范围来调节导电状态,这使其能够应用于受脑启发的神经形态计算。改进的美国国家标准与技术研究院识别准确率可达86%,在摩尔时代后的神经形态计算应用中显示出巨大潜力。

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