一种用于界面能隙测定的新方法。
A novel method for interfacial energy gap determination.
作者信息
Zhou Xuehua, Chen Yushu, Li Qingxia, Yang Shixing, Han Chao
机构信息
Anhui Key Laboratory of Photoelectric-Magnetic Functional Materials, Anhui Key Laboratory of Functional Coordination Compounds, Ultra High Molecular Weight Polyethylene Fiber Engineering Research Center of Anhui Province, School of Chemistry and Chemical Engineering, Anqing Normal University, Anqing, 246011, People's Republic of China.
The Second Affiliated Hospital of Zhejiang Chinese Medical University, Hangzhou, 310000, People's Republic of China.
出版信息
Sci Rep. 2024 Jul 23;14(1):16919. doi: 10.1038/s41598-024-67987-7.
A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlO/Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the I-V curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C, PTCDA, and Alq3, has been determined finally.
精确量化分子半导体的能隙至关重要。然而，一直缺乏合适的方法，导致测量不准确。在本研究中，一种名为热电子晶体管的三端垂直结构（Al/AlO/Au/分子半导体/Al）被设计为确定能隙的最有效方法。通过分析I-V曲线，可以提取电子注入势垒和空穴注入势垒。综合两者，最终确定了包括PBDB-T-2Cl、C、PTCDA和Alq3在内的四种物质的能隙。
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