Rieland Lukas, Wagner Julian, Bernhardt Robin, Wang Tianyi, Abdul-Aziz Omar, Stein Philipp, Pogna Eva A A, Dal Conte Stefano, Cerullo Giulio, Hedayat Hamoon, van Loosdrecht Paul H M
II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, Köln D-50937, Germany.
Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, 20133 Milano, Italy.
Nano Lett. 2024 Aug 14;24(32):9824-9831. doi: 10.1021/acs.nanolett.4c01516. Epub 2024 Jul 26.
Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion in a monolayer WSe stacked on graphene. The diffusion dynamics can be optically tuned within a few picoseconds by altering the photoexcited carrier density in graphene. The effective diffusion constant in initial picoseconds in the WSe/graphene heterostructure is (40.3 ± 4.5) cm s, representing a substantial improvement over (2.1 ± 0.8) cm s, typical for an isolated WSe monolayer. This enhancement can be understood in terms of a transient screening of impurities, charge traps, and defect states in WSe by photoexcited charge carriers in graphene. Furthermore, diffusion within WSe is affected by interlayer interactions, such as charge transfer, varying with the incident excitation fluence. These findings underscore the dynamical nature of screening and diffusion processes in heterostructures of 2D semiconductors and graphene and provide insights for future applications of these systems in ultrafast optoelectronic devices.
利用外差瞬态光栅光谱技术,我们观察到堆叠在石墨烯上的单层WSe₂中激子扩散的显著增强。通过改变石墨烯中的光激发载流子密度,扩散动力学可以在几皮秒内进行光学调控。WSe₂/石墨烯异质结构中初始皮秒内的有效扩散常数为(40.3 ± 4.5) cm²/s,相较于孤立WSe₂单层典型的(2.1 ± 0.8) cm²/s有显著提高。这种增强可以通过石墨烯中的光激发电荷载流子对WSe₂中的杂质、电荷陷阱和缺陷态的瞬态屏蔽来理解。此外,WSe₂内的扩散受层间相互作用影响,如电荷转移,其随入射激发通量而变化。这些发现强调了二维半导体和石墨烯异质结构中屏蔽和扩散过程的动态性质,并为这些系统在超快光电器件中的未来应用提供了见解。