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单原子催化剂的共掺杂工程对光催化CO还原的调控

Modulation of Photocatalytic CO Reduction by - Codoping Engineering of Single-Atom Catalysts.

作者信息

Yin Guowei, Zhang Chunxiao, Liu Yundan, Sun Yuping, Qi Xiang

机构信息

School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China.

Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, China.

出版信息

Nanomaterials (Basel). 2024 Jul 11;14(14):1183. doi: 10.3390/nano14141183.

Abstract

Transition metal (TM) single-atom catalysts (SACs) have been widely applied in photocatalytic CO reduction. In this work, - codoping engineering is introduced to account for the modulation of photocatalytic CO reduction on a two-dimensional (2D) bismuth-oxyhalide-based cathode by using first-principles calculation. - codoping is established via the Coulomb interactions between the negatively charged TM SACs and the positively charged vacancy () in the dopant-defect pairs. Based on the formation energy of charged defects, neutral dopant-defect pairs for the Fe, Co, and Ni SACs () and the -1 charge state of the Cu SAC-based pair () are stable. The electrostatic attraction of the - codoping strengthens the stability and solubility of TM SACs by neutralizing the oppositely charged defect and TM dopant. The - codoping stabilizes the electron accumulation around the TM SACs. Accumulated electrons modify the -orbital alignment and shift the -band center toward the Fermi level, enhancing the reducing capacity of TM SACs based on the d-band theory. Besides the electrostatic attraction of the - codoping, the also accumulates additional electrons surrounding Cu SACs and forms a half-occupied state, which further upshifts the -band center and improves photocatalytic CO reduction. The metastability of multivacancies limits the concentration of the - pairs with multivacancies ( (n > 1)). Positively charged centers around the (n > 1) hinders the CO reduction by shielding the charge transfer to the CO molecule.

摘要

过渡金属(TM)单原子催化剂(SACs)已广泛应用于光催化CO还原。在这项工作中,通过第一性原理计算引入了-共掺杂工程,以解释二维(2D)卤氧化铋基阴极上光催化CO还原的调制。-共掺杂是通过带负电的TM SACs与掺杂剂-缺陷对中带正电的空位()之间的库仑相互作用建立的。基于带电缺陷的形成能,Fe、Co和Ni SACs()的中性掺杂剂-缺陷对以及基于Cu SAC的对()的-1电荷态是稳定的。-共掺杂的静电吸引力通过中和带相反电荷的缺陷和TM掺杂剂来增强TM SACs的稳定性和溶解性。-共掺杂使TM SACs周围的电子积累稳定。积累的电子改变了-轨道排列并将-带中心向费米能级移动,基于d带理论增强了TM SACs的还原能力。除了-共掺杂的静电吸引力外,还在Cu SACs周围积累了额外的电子并形成了半占据的状态,这进一步使-带中心上移并改善了光催化CO还原。多空位的亚稳性限制了具有多空位((n>1))的-对的浓度。(n>1)周围的带正电中心通过屏蔽向CO分子的电荷转移来阻碍CO还原。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8985/11280387/dfa78232eb74/nanomaterials-14-01183-g001.jpg

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