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具有硫掺杂和氧空位协同效应的氧化钼:硫掺杂对结构、形貌和光电性能的影响。

MoO with the Synergistic Effect of Sulfur Doping and Oxygen Vacancies: The Influence of S Doping on the Structure, Morphology, and Optoelectronic Properties.

作者信息

Yu Jian, Zheng Zhaokang, Wang Aiwu, Humayun Muhammad, Attia Yasser A

机构信息

Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, China.

Energy, Water and Environment Lab, College of Humanities Sciences, Prince Sultan University, Riyadh 11586, Saudi Arabia.

出版信息

Nanomaterials (Basel). 2024 Jul 12;14(14):1189. doi: 10.3390/nano14141189.

Abstract

Molybdenum trioxide (MoO) is an attractive semiconductor. Thus, bandgap engineering toward photoelectronic applications is appealing yet not well studied. Here, we report the incorporation of sulfur atoms into MoO, using sulfur powder as a source of sulfur, via a self-developed hydrothermal synthesis approach. The formation of Mo-S bonds in the MoO material with the synergistic effect of sulfur doping and oxygen vacancies (designated as S-MoO) is confirmed using Fourier-transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and electron paramagnetic resonance (EPR). The bandgap is tuned from 2.68 eV to 2.57 eV upon sulfur doping, as confirmed by UV-VIS DRS spectra. Some MoS phase is identified with sulfur doping by referring to the photoluminescence (PL) spectra and electrochemical impedance spectroscopy (EIS), allowing significantly improved charge carrier separation and electron transfer efficiency. Therefore, the as-prepared S-MoO delivers a sensitive photocurrent response and splendid cycling stability. This study on the synergistic effect of sulfur doping and oxygen vacancies provides key insights into the impact of doping strategies on MoO performance, paving new pathways for its optimization and development in relevant fields.

摘要

三氧化钼(MoO₃)是一种具有吸引力的半导体。因此,针对光电子应用的带隙工程很有吸引力,但尚未得到充分研究。在此,我们报告通过自主研发的水热合成方法,以硫粉作为硫源,将硫原子掺入MoO₃中。利用傅里叶变换红外(FTIR)光谱、X射线光电子能谱(XPS)和电子顺磁共振(EPR)证实了在硫掺杂和氧空位的协同作用下,MoO₃材料中形成了Mo-S键(命名为S-MoO₃)。紫外-可见漫反射光谱(UV-VIS DRS)证实,硫掺杂后带隙从2.68 eV调至2.57 eV。通过参考光致发光(PL)光谱和电化学阻抗谱(EIS)确定硫掺杂存在一些MoS₂相,这使得电荷载流子分离和电子转移效率显著提高。因此,所制备的S-MoO₃具有灵敏的光电流响应和出色的循环稳定性。这项关于硫掺杂和氧空位协同效应的研究为掺杂策略对MoO₃性能的影响提供了关键见解,为其在相关领域的优化和发展开辟了新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cf28/11280073/82fe93d7b395/nanomaterials-14-01189-g001.jpg

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