Tang Mingmeng, Liu Lisha, Gao Xuan, Zhang Zhang, Wang Yaojin
School of Materials Science and Engineering, Nanjing University of Science and Technology, 210094 Nanjing, China.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41185-41193. doi: 10.1021/acsami.4c08300. Epub 2024 Jul 29.
The enhancement of piezoelectricity without compromising the Curie temperature of a piezoelectric is challenging due to phenomenological incompatibility. In the present work, the phase diagram of (0.68-)BiFeO-BiScO-0.32PbTiO, with varied addition of BiScO ( = 0, 0.05, 0.10, 0.15, and 0.20), was constructed through systematic studies of the dielectric, ferroelectric, and piezoelectric properties. A rhombohedral-tetragonal phase boundary was observed near = 0.10 BiScO addition, of which the piezoelectricity was found to be seven times larger than that without BiScO (∼208 pm/V vs ∼38 pm/V). Most importantly, a high Curie temperature of 430 °C is successfully inherited from binary 0.68BiFeO-0.32PbTiO. This is explained by optimized Bi compensation, which is observed critical regulating Curie temperature in BFO-based binary and ternary systems. These results open up a paradigm for collaboratively optimizing the Curie temperature and piezoelectric response for a number of ferroelectrics and provide a promising BiFeO-BiScO-PbTiO film with integrated prominent performance for potential applications at elevated temperatures.
由于现象学上的不相容性，在不降低压电材料居里温度的情况下增强压电性具有挑战性。在本工作中，通过对（0.68 -）BiFeO - BiScO - 0.32PbTiO在不同BiScO添加量（ = 0、0.05、0.10、0.15和0.20）下的介电、铁电和压电性能进行系统研究，构建了其相图。在BiScO添加量约为0.10处观察到一个菱方 - 四方相界，发现其压电性比无BiScO时大七倍（约208 pm/V对约38 pm/V）。最重要的是，成功从二元0.68BiFeO - 0.32PbTiO继承了430 °C的高居里温度。这可以通过优化的Bi补偿来解释，在基于BFO的二元和三元系统中，Bi补偿被观察到对调节居里温度至关重要。这些结果为协同优化多种铁电体的居里温度和压电响应开辟了一种范例，并为高温潜在应用提供了一种具有综合优异性能的有前景的BiFeO - BiScO - PbTiO薄膜。
