高居里温度的铋铟氧化物-钛酸铅薄膜。
High Curie temperature BiInO-PbTiO films.
作者信息
Lee Sun Young, Wang Wei, Trolier-McKinstry Susan
机构信息
Materials Research Institute, The Pennsylvania State University , University Park, Pennsylvania 16802, USA.
College of Physics Science and Technology, Yangzhou University , Yangzhou 225002, China.
出版信息
J Appl Phys. 2014 Jun 14;115(22):224105. doi: 10.1063/1.4881797. Epub 2014 Jun 11.
High Curie temperaturepiezoelectricthin films of BiInO-(1-)PbTiO ( = 0.10, 0.15, 0.20, and 0.25) were prepared by pulsed laser deposition. It was found that the tetragonality of films decreased with increasing BI content. The dielectric constant and transverse piezoelectric coefficient (e ) exhibit the highest values of 665 and -13.6 C/m at = 0.20. Rayleigh analyses were performed to identify the extrinsic contributions to dielectric nonlinearity with different . The composition with = 0.20 also exhibits the largest extrinsic contributions to dielectric nonlinearity. The Curie temperature ( ) is increased with increasing content from 558 to 633 °C; at = 0.20 is about 584 °C.
通过脉冲激光沉积制备了BiInO-(1-)PbTiO（= 0.10、0.15、0.20和0.25）的高居里温度压电薄膜。发现随着BiInO含量的增加，薄膜的四方性降低。在= 0.20时，介电常数和横向压电系数（e）分别呈现出665和-13.6 C/m的最高值。进行了瑞利分析以确定不同时介电非线性的外在贡献。= 0.20的成分对介电非线性也表现出最大的外在贡献。居里温度（）随着含量从558升高到633°C而增加；在= 0.20时约为584°C。
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