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利用准分子激光在非晶硅衬底上由氧化石墨烯制备涂覆有石墨烯的晶体硅纳米线。

Fabrication of crystalline silicon nanowires coated with graphene from graphene oxide on amorphous silicon substrate using excimer laser.

作者信息

Aziz Christen, Othman Muhammad A, Amer Aya, Ghanim AbdelRahman M, Swillam Mohamed A

机构信息

Solid State Physics Department, National Research Centre, Giza, Egypt.

Department of Physics, American University in Cairo, AUC Avenue, New Cairo, 11835, Cairo, Egypt.

出版信息

Heliyon. 2024 Jul 4;10(13):e34023. doi: 10.1016/j.heliyon.2024.e34023. eCollection 2024 Jul 15.

DOI:10.1016/j.heliyon.2024.e34023
PMID:39071646
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11282994/
Abstract

In this work, we report a single-step graphene-coated crystalline silicon nanowires (SiNWs) manufacturing technique. We report a one-step fabrication technique of SiNWscoated reduced graphene oxide using a krypton fluoride (KrF) excimer laser. The SiNWs have been manufactured by redistributing the silicon mass within the sample without etching any of the deposited amorphous silicon (a-Si) and then adding a synthesized graphene oxide suspension using the modified Hummers' method. The process is optimized to ensure that the graphene is completely reduced and that the crystalline nanowires are formed. In order to allow full control of the dimension of the generated nanowires, the properties of the excimer laser have been investigated. Additionally, graphene-coated Si nanowires have also been synthesized to be used for gas-sensing applications in the future. In this work, we are eviting the repetition of the previously published work by the same research group for the sake of brevity. But the reader can refer to the previously published work on the study of the effect of different parameters on the SiNWs growth like the study of the effect of changing the normalized frequency on the size of the grown SiNWs in terms of length and diameter as well as other parameters mentioned in the previously published work in the references.

摘要

在这项工作中，我们报告了一种单步制造石墨烯包覆的晶体硅纳米线（SiNWs）的技术。我们报告了一种使用氟化氪（KrF）准分子激光的一步法制造包覆还原氧化石墨烯的SiNWs的技术。SiNWs是通过在不蚀刻任何沉积的非晶硅（a-Si）的情况下在样品内重新分布硅质量，然后添加使用改进的Hummers法合成的氧化石墨烯悬浮液来制造的。该工艺经过优化，以确保石墨烯完全还原并形成晶体纳米线。为了能够完全控制所生成纳米线的尺寸，对准分子激光的特性进行了研究。此外，还合成了石墨烯包覆的硅纳米线，以备将来用于气体传感应用。在这项工作中，为了简洁起见，我们避免重复同一研究小组之前发表的工作。但读者可参考之前发表的关于不同参数对SiNWs生长影响的研究，比如关于改变归一化频率对生长的SiNWs长度和直径尺寸以及参考文献中之前发表工作中提到的其他参数影响的研究。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/23f3c5dc8faa/gr11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/9ce719a1fa64/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/ec2f807e743f/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/7dcf52e0a225/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/00fb1cee9fab/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/0b916df8b031/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/2e6a1889ad13/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/3f0b1548b77d/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/0c1d4c6a6214/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/870484038278/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/ee2f6f091b89/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/23f3c5dc8faa/gr11.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/9ce719a1fa64/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/ec2f807e743f/gr2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/7dcf52e0a225/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/00fb1cee9fab/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/0b916df8b031/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/2e6a1889ad13/gr6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/3f0b1548b77d/gr7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/0c1d4c6a6214/gr8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/870484038278/gr9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/ee2f6f091b89/gr10.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccab/11282994/23f3c5dc8faa/gr11.jpg

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本文引用的文献

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