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有机铵盐辅助的埋入界面准二维纯蓝色钙钛矿的结晶及缺陷钝化

Organic ammonium salt assisted crystallization and defect passivation of a quasi-two-dimensional pure blue perovskite at the buried interface.

作者信息

Zhu Mingyi, Dong Jie, Du Kang, Li Huitian, Jiang Na, Xu Zheng, Zhao Suling, Liang Zhiqin, Song Dandan, Qiao Bo

机构信息

Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.

Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China.

出版信息

Phys Chem Chem Phys. 2024 Aug 7;26(31):21147-21154. doi: 10.1039/d4cp01651c.

DOI:10.1039/d4cp01651c
PMID:39072377
Abstract

Quasi-two-dimensional (quasi-2D) perovskites exhibit excellent performance in light-emitting diodes (LEDs). However, the quality of perovskite films prepared the solution method is significantly impacted by the enormous number of defects that unavoidably form at the grain boundaries and interfaces during the precursor to the crystal formation process. Here, we propose a strategy to assist perovskite crystallization and defect passivation at the buried interface through interfacial modification. The organic ammonium salt, ethylamine chloride (EACl), is added to the hole transport material and modifies the buried interface of the perovskite film. EACl introduces the nucleation sites for perovskite precursors, and promotes the crystallization process of the perovskite grains, contributing to the formation of high-quality perovskite films. At the same time, the presence of Lewis base (-NH) groups in EACl and their lone electron pairs effectively inactivate unlocated Pb ions at the buried interface, thereby reducing non-radiative recombination. In addition, chloride ions help to mitigate defects and to improve the morphology of perovskite films. Devices with this modification show a higher performance than control devices on all metrics. This work proposes a facile but efficient way for improving quasi-2D pure blue perovskite crystallization and growth.

摘要

准二维(quasi-2D)钙钛矿在发光二极管(LED)中表现出优异的性能。然而,通过溶液法制备的钙钛矿薄膜的质量会受到极大影响,因为在前体到晶体形成过程中,在晶界和界面处不可避免地会形成大量缺陷。在此,我们提出一种策略,通过界面改性来辅助钙钛矿在掩埋界面处的结晶和缺陷钝化。将有机铵盐氯化乙胺(EACl)添加到空穴传输材料中,对钙钛矿薄膜的掩埋界面进行改性。EACl为钙钛矿前驱体引入成核位点,促进钙钛矿晶粒的结晶过程,有助于形成高质量的钙钛矿薄膜。同时,EACl中路易斯碱(-NH)基团的存在及其孤对电子有效地使掩埋界面处未配位的Pb离子失活,从而减少非辐射复合。此外,氯离子有助于减轻缺陷并改善钙钛矿薄膜的形貌。经过这种改性的器件在所有指标上都比对照器件表现出更高的性能。这项工作提出了一种简便而有效的方法来改善准二维纯蓝色钙钛矿的结晶和生长。

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