Wang Cheng, Hu Yifeng, Zhu Xiaoqin
School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China.
Langmuir. 2024 Aug 13;40(32):16936-16945. doi: 10.1021/acs.langmuir.4c01672. Epub 2024 Jul 30.
With the expanding utilization of space technology, the stability of electronic components' performance in radiation environments has garnered significant attention. In this study, we prepared GeSbTe phase change films and memory units on silicon substrates to explore the influence of ultraviolet (UV) radiation on their characteristics. The experimental findings revealed that UV irradiation at a power density of 450 mW/cm decreased the amorphous resistance and thermal stability of GeSbTe films, impeding their multistage storage performance. Nevertheless, the amorphous state could still undergo effective transformation into a crystalline state. Furthermore, UV irradiation triggered the photoelectric effect, narrowing the band gap and causing a redshift of the Raman peak in amorphous films. Remarkably, the surface properties of GeSbTe films remained unchanged under irradiation. The phase change memory device based on GeSbTe film retained its SET-RESET conversion capability at a pulse width of 100 ns post-UV irradiation, demonstrating resilience against UV radiation. This study offers the practical insights for the application of phase change memory in space radiation environments.
随着空间技术应用范围的不断扩大，电子元件在辐射环境中性能的稳定性受到了广泛关注。在本研究中，我们在硅衬底上制备了GeSbTe相变薄膜和存储单元，以探究紫外线（UV）辐射对其特性的影响。实验结果表明，功率密度为450 mW/cm的UV辐照降低了GeSbTe薄膜的非晶电阻和热稳定性，阻碍了其多级存储性能。然而，非晶态仍能有效地转变为晶态。此外，UV辐照引发了光电效应，缩小了带隙并导致非晶薄膜中拉曼峰发生红移。值得注意的是，GeSbTe薄膜的表面性质在辐照下保持不变。基于GeSbTe薄膜的相变存储器件在UV辐照后，在100 ns的脉冲宽度下仍保持其SET-RESET转换能力，显示出对UV辐射的耐受性。本研究为相变存储器在空间辐射环境中的应用提供了实际见解。
