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用于相变电子学的有机半导体的直接激光写入晶体多晶型物

Direct Laser Writing Crystal Polymorphs of Organic Semiconductors for Phase Change Electronics.

作者信息

Davies Daniel William, Jeon Sanghyun, Graziano Giorgio, Patel Bijal B, Liu Wuyue, Strzalka Joseph, Zhu Xiaozhang, Diao Ying

机构信息

Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States.

Department Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 14;16(32):42546-42554. doi: 10.1021/acsami.4c01362. Epub 2024 Jul 31.

DOI:10.1021/acsami.4c01362
PMID:39082972
Abstract

The many diverse polymorphic behaviors observed in organic electronic materials offer opportunities to modulate electronic properties through reversibly switching crystal structures. Here, we access the prolific polymorphism observed in two-dimensional quinoidal terthiophene via laser writing to locally heat and direct the phase transitions. We access a metastable polymorph IV through rapid cooling and observe distinct symmetry as well as packing through grazing incidence X-ray diffraction (GIXD). Using our open-source PolyChemPrint patterning platform, we direct laser heating to initiate the IV-I transition, switching the conductance by >2 orders of magnitude. This is confirmed via a combination of GIXD and Raman spectroscopy. Finally, we demonstrate switching of transistor devices as well as discrete tuning of conductance via laser writing.

摘要

在有机电子材料中观察到的多种不同的多晶型行为,为通过可逆地切换晶体结构来调节电子特性提供了机会。在此,我们通过激光写入来局部加热并引导相变,从而利用二维醌式三联噻吩中观察到的丰富多晶型现象。通过快速冷却,我们获得了一种亚稳多晶型IV,并通过掠入射X射线衍射(GIXD)观察到了明显的对称性以及堆积情况。利用我们的开源PolyChemPrint图案化平台,我们引导激光加热引发IV-I转变,使电导率切换超过2个数量级。这通过GIXD和拉曼光谱的结合得到了证实。最后,我们展示了晶体管器件的切换以及通过激光写入对电导率的离散调节。

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