Michalko M J, Churnetski K, Katz J, Regan S P, Theobald W, Ivancic S T
Laboratory for Laser Energetics, University of Rochester, Rochester, New York 14623-1299, USA.
Focused Energy, Austin, Texas 78758, USA.
Rev Sci Instrum. 2024 Aug 1;95(8). doi: 10.1063/5.0219499.
The single-line-of-sight time-resolved x-ray imager (SLOS-TRXI), a fast-gated x-ray imager used for capturing x-ray self-emission in inertial confinement fusion experiments on OMEGA, has been upgraded and characterized. SLOS-TRXI combines an electron-dilation imager and a hybrid complementary metal-oxide-semiconductor (hCMOS) sensor to capture multiple gated frames on a single line of sight with a temporal resolution of ∼40 ps and a spatial resolution of 10 µm. The original hCMOS sensor with four frames was replaced with a newer-generation hCMOS sensor having eight frames. Gate characterizations of both the sensor and the entire SLOS-TRXI diagnostic were performed using ∼10-ps FWHM visible (2ω) and UV (4ω) short-pulse lasers, respectively. A stepped echelon was used to generate a train of five UV laser pulses having an interpulse separation of 30 ± 3 ps. Characterization results of the hCMOS gating (2.28 ± 0.02-ns FWHM on average) and a temporal resolution of the upgraded SLOS-TRXI (34 ± 4-ps FWHM on average) are presented. A temporal magnification for the electron-dilation imager between 40 and 60 was inferred from the characterization results. The spatial resolution of the upgraded SLOS-TRXI remains the same in light of this work.
用于在欧米茄（OMEGA）惯性约束聚变实验中捕获X射线自发射的单视线时间分辨X射线成像仪（SLOS-TRXI），一种快速门控X射线成像仪，已经完成升级并进行了特性表征。SLOS-TRXI结合了电子膨胀成像仪和混合互补金属氧化物半导体（hCMOS）传感器，以在单视线上捕获多个门控帧，时间分辨率约为40皮秒，空间分辨率为10微米。原来带有四个帧的hCMOS传感器被新一代的具有八个帧的hCMOS传感器所取代。分别使用半高宽约为10皮秒的可见光（2ω）和紫外光（4ω）短脉冲激光对传感器和整个SLOS-TRXI诊断设备进行了门控特性表征。使用一个阶梯光阑产生一列五个紫外激光脉冲，脉冲间隔为30±3皮秒。给出了hCMOS门控的表征结果（平均半高宽为2.28±0.02纳秒）和升级后的SLOS-TRXI的时间分辨率（平均半高宽为34±4皮秒）。从表征结果推断出电子膨胀成像仪的时间放大倍数在40到60之间。根据这项工作，升级后的SLOS-TRXI的空间分辨率保持不变。
