Luo Binbin, Zhang Conglin, Meng Wei, Xiong Wen, Yang Min, Yang Linlong, Zhu Bao, Wu Xiaohan, Ding Shi-Jin
School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, People's Republic of China.
Nanotechnology. 2024 Aug 14;35(44). doi: 10.1088/1361-6528/ad6c56.
Sn-doped indium oxide (ITO) semiconductor nano-films are fabricated by plasma-enhanced atomic layer deposition using trimethylindium (TMIn), tetrakis(dimethylamino)tin (TDMASn), and Oplasma as the sources of In, Sn and O, respectively. A shared temperature window of 150 °C- 200 °C is observed for the deposition of ITO nano-films. The introduction of Sn into indium oxide is found to increase the concentration of oxygen into the ITO films and inhibit crystallization. Furthermore, two oxidation states are observed for In and Sn, respectively. With the increment of interfaces of In-O/Sn-O in the ITO films, the relative percentage of Inions increases and that of Sndecreases, which is generated by interfacial competing reactions. By optimizing the channel component, the InSnOthin-film transistors (TFTs) demonstrate high performance, includingof 52.7 cmVs, and a high/of ∼5 × 10. Moreover, the devices show excellent positive bias temperature stress stability at 3 MV cmand 85 °C, i.e. a minimalshift of 0.017 V after 4 ks stress. This work highlights the successful application of ITO semiconductor nano-films by ALD for TFTs.
通过等离子体增强原子层沉积法，分别使用三甲基铟（TMIn）、四（二甲基氨基）锡（TDMASn）和氧等离子体作为铟、锡和氧的源，制备了掺锡氧化铟（ITO）半导体纳米薄膜。在150℃至200℃的共享温度窗口内观察到ITO纳米薄膜的沉积。发现将锡引入氧化铟中会增加ITO薄膜中的氧浓度并抑制结晶。此外，分别观察到铟和锡的两种氧化态。随着ITO薄膜中In-O/Sn-O界面的增加，由界面竞争反应产生的In离子的相对百分比增加，而Sn的相对百分比降低。通过优化沟道成分，InSnO薄膜晶体管（TFT）表现出高性能，包括迁移率为52.7 cm² V⁻¹ s⁻¹，高开/关比约为5×10⁷。此外，这些器件在3 MV cm⁻¹和85℃下表现出优异的正偏压温度应力稳定性，即在4 ks应力后最小偏移为0.017 V。这项工作突出了通过ALD成功地将ITO半导体纳米薄膜应用于TFT。
