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通过BICAAC-Si(IV)前体的还原路线合成BICAAC负载的Si(III)自由基和硅烯酮。

Synthesis of BICAAC Supported Si(III) Radicals and a Silylone via Reduction Route From BICAAC-Si(IV) Precursors.

作者信息

Kumar Thakur Sandeep, De Sriman, Adhikari Manu, Manar Krishna K, Koley Debasis, Singh Sanjay

机构信息

Department of Chemical Science, Indian Institute of Science Education and Research (IISER) Mohali, Knowledge City, Sector 81, SAS Nagar Mohali, 140306, Punjab, India.

Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER), Kolkata, Mohanpur, 741246, India.

出版信息

Chem Asian J. 2024 Nov 18;19(22):e202400730. doi: 10.1002/asia.202400730. Epub 2024 Oct 17.

DOI:10.1002/asia.202400730
PMID:39132698
Abstract

Past one decade has witnessed a tremendous growth in the field of carbene stabilized low-valent silicon compounds unravelling very exciting properties of these molecules. Herein, we have employed a bicyclic (alkyl)(amino)carbene, (BICAAC) to explore the low-valent chemistry of silicon. The reduction of bicyclic (alkyl)(amino)carbene-SiCl complex, [(BICAAC)SiCl] (1) with KC afforded low-valent Si complexes, including Si(III) radical [(BICAAC)SiCl] (2) and a complex with silicon center in a formal zero-valent state, [(BICAAC)Si] (3). Similarly, the reduction of in-situ generated BICAAC adduct of MeSiCl with one equivalent of KC led to the formation of [(BICAAC)SiMeCl] (4) complex having an unpaired electron. These complexes have been characterized by IR, UV-Vis., NMR, HRMS, EPR and their solid-state structures were also elucidated by single crystal X-ray crystallography. Further, DFT calculations revealed the lower energy singlet state for complexes 1, 3 and doublet state for complexes 2, 4.

摘要

在过去十年中,卡宾稳定的低价硅化合物领域取得了巨大发展,揭示了这些分子非常令人兴奋的性质。在此,我们使用了双环(烷基)(氨基)卡宾(BICAAC)来探索硅的低价化学。双环(烷基)(氨基)卡宾 - 硅氯络合物[(BICAAC)SiCl](1)与KC反应,得到了低价硅络合物,包括硅(III)自由基[(BICAAC)SiCl](2)和一种硅中心处于形式零价态的络合物[(BICAAC)Si](3)。同样,用一当量的KC还原原位生成的MeSiCl的BICAAC加合物,导致形成具有未成对电子的[(BICAAC)SiMeCl](4)络合物。这些络合物已通过红外光谱、紫外可见光谱、核磁共振、高分辨质谱、电子顺磁共振进行了表征,并且它们的固态结构也通过单晶X射线晶体学得以阐明。此外,密度泛函理论计算揭示了络合物1、3的较低能量单重态以及络合物2、4的双重态。

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