Ritanjali Sushree Ritu, Bhandaru Nandini, Mukherjee Rabibrata
Instability and Soft Patterning Laboratory, Department of Chemical Engineering, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721-302, India.
Department of Chemical Engineering, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Telangana 500-078, India.
Langmuir. 2024 Aug 12. doi: 10.1021/acs.langmuir.4c00509.
Ultraviolet irradiation of a cross-linked polydimethylsiloxane (PDMS) Sylgard 184 film in the presence of atmospheric oxygen (UVO) through a bare transmission electron microscope (TEM) sample holding grid is a rather simple and widely utilized technique for creating micropatterned surfaces. The surface oxidation of a Sylgard 184 film due to UVO exposure is associated with densification and the formation of a silica-like surface layer, which under a TEM grid happens only over the exposed areas of the film, resulting in a physicochemical pattern. It is known that the depth () of the features depends on the duration of UVO exposure (). In this article, we show for the first time that also depends on the initial film thickness () and the cross-linker percentage (, ratio of part A to part B) in a Sylgard 184 thin film. We show that for a specific , progressively decreases with the reduction in . On the other hand, shows a nonmonotonic dependence with , resulting in patterns with maximum depth for ≈ 10.0%. We attribute this observation to the combined effect of resistance against the penetration of the propagation front by the rigid substrate as well as stress relaxation within the exposed parts of the film below the propagating front in films with higher values leading to the variation of . The observation reported here would allow the potential fabrication of polymer films with physicochemical patterns with feature height on demand by a one-step, facile technique.
在大气氧气存在的情况下,通过裸露的透射电子显微镜(TEM)样品夹持网格对交联聚二甲基硅氧烷(PDMS)Sylgard 184薄膜进行紫外线照射(UVO),是一种用于创建微图案化表面的相当简单且广泛应用的技术。由于UVO曝光,Sylgard 184薄膜的表面氧化与致密化以及类似二氧化硅表面层的形成有关,在TEM网格下,这种情况仅发生在薄膜的暴露区域,从而产生物理化学图案。已知特征的深度()取决于UVO曝光的持续时间()。在本文中,我们首次表明 还取决于Sylgard 184薄膜的初始膜厚度()和交联剂百分比(,A部分与B部分的比例)。我们表明,对于特定的 ,随着 的减小, 逐渐减小。另一方面, 与 呈现非单调依赖性,在 约为10.0%时产生具有最大深度的图案。我们将这一观察结果归因于刚性基材对传播前沿穿透的阻力以及在具有较高 值的薄膜中传播前沿下方薄膜暴露部分内的应力松弛的综合作用,从而导致 的变化。此处报道的观察结果将允许通过一种一步式、简便的技术按需制造具有特定特征高度的物理化学图案的聚合物薄膜。