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一维阻挡层的原位生长以减轻单晶钙钛矿的表面缺陷

In-Situ Growth of One-Dimensional Blocking Layer to Mitigate Deficient Surface of Single-Crystal Perovskites.

作者信息

Jiang Changke, Li Ning, Niu Yawei, Liu Nianqiao, Li Dalin, Jin Gan, Zhong Yu, Tao Xutang, Chen Zhaolai

机构信息

State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.

School of Material and Chemical Engineering, Chuzhou University, Chuzhou, 239000, P. R. China.

出版信息

Angew Chem Int Ed Engl. 2024 Dec 20;63(52):e202412485. doi: 10.1002/anie.202412485.

DOI:10.1002/anie.202412485
PMID:39140456
Abstract

Organic-inorganic halide perovskite (OIHP) single crystals are promising for optoelectronic application, but their high surface trap density and associated ion migration hinders device performance and stability. Herein, a one-dimensional (1D) perovskites are designed and proposed as blocking layer at the crystal/electrode interface to mitigate the surface issues. As a model system, the interface ion migration in CsFAPbI (FA=formamidinium) single-crystal perovskite solar cells (PSCs) is obviously suppressed, leading to increase of T lifetime from 260 to 1000 hours, five times better than previously reported results. Besides, the reduction of surface iodide ion vacancies inhibits nonradiative recombination, thus increasing the efficiency from 22.1 % to 23.8 %, which is one of the highest values for single-crystal PSCs. Since the deficient crystal surface is a universal and open issue, our strategy is instructive for optimizing diverse single-crystal perovskite devices.

摘要

有机-无机卤化物钙钛矿(OIHP)单晶在光电子应用方面很有前景,但其高表面陷阱密度和相关的离子迁移阻碍了器件性能和稳定性。在此,一维(1D)钙钛矿被设计并提议作为晶体/电极界面处的阻挡层,以缓解表面问题。作为一个模型系统,CsFAPbI(FA=甲脒)单晶钙钛矿太阳能电池(PSC)中的界面离子迁移得到了明显抑制,使得T寿命从260小时增加到1000小时,比之前报道的结果好五倍。此外,表面碘离子空位的减少抑制了非辐射复合,从而使效率从22.1%提高到23.8%,这是单晶PSC的最高值之一。由于晶体表面缺陷是一个普遍且亟待解决的问题,我们的策略对于优化各种单晶钙钛矿器件具有指导意义。

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