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应变驱动的拓扑磁性单层CrSeBr中的斯格明子-双斯格明子转变

Strain-driven skyrmion-bimeron switching in topological magnetic monolayer CrSeBr.

作者信息

Yang Junhuang, Dou Kaiying, Li Xinru, Dai Ying, Huang Baibiao, Ma Yandong

机构信息

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, China.

出版信息

Mater Horiz. 2024 Oct 28;11(21):5374-5380. doi: 10.1039/d4mh00734d.

Abstract

Skyrmion-bimeron switching is one of the most important phenomena in topological magnetism. Currently, it is usually realized by the annoying spin orientation vertical-reversal through magnetic field. Based on first-principles calculations and atomic spin simulations, we alternatively unveil that the switching between magnetic skyrmions and bimerons can be achieved in topological magnetic monolayer CrSeBr by external strain. The core mechanism of this switching is traced to the controllable magnetic anisotropy of monolayer CrSeBr influenced by the strain-engineered low-energy states around the Fermi level. We also introduce a parameter || as a criterion for judging the stability of magnetic skyrmions and bimerons, which can be adopted as a useful descriptor linking the presence of skyrmion-bimeron switching driven by strain. The underlying physics is discussed in detail. The predicted strain controlled skyrmion-bimeron switching may be interesting for topological magnetic devices.

摘要

斯格明子-双斯格明子转变是拓扑磁学中最重要的现象之一。目前,它通常通过磁场使自旋取向垂直反转来实现,这很麻烦。基于第一性原理计算和原子自旋模拟,我们另辟蹊径地揭示出,在拓扑磁性单层CrSeBr中,通过外部应变可以实现磁斯格明子和双斯格明子之间的转变。这种转变的核心机制可追溯到受费米能级附近应变工程低能态影响的单层CrSeBr可控磁各向异性。我们还引入一个参数||作为判断磁斯格明子和双斯格明子稳定性的标准,该参数可作为连接由应变驱动的斯格明子-双斯格明子转变存在情况的有用描述符。详细讨论了其潜在物理原理。预测的应变控制斯格明子-双斯格明子转变可能对拓扑磁学器件具有重要意义。

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