Lu Guochao, Wang Xinyang, Jiang Xinyi, Li Jing, Zhu Meiyi, Ma Zichao, Zhang Dingshuo, Gao Yun, Pan Jun, Dai Xingliang, Ye Zhizhen, He Haiping
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.
College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, P. R. China.
ACS Nano. 2024 Aug 27;18(34):23457-23467. doi: 10.1021/acsnano.4c06877. Epub 2024 Aug 15.
All-inorganic perovskite films have emerged as promising candidates for laser gain materials owing to their outstanding optoelectronic properties and straightforward solution processing. However, the performance of blue perovskite lasing still lags far behind due to the inevitable high density of defects. Herein, we demonstrate that defects can be utilized instead of passivated/removed to form bound excitons to achieve excellent blue stimulated emission in perovskite films. Such a strategy emphasizes defect engineering by introducing a deep-level defect in mixed-Rb/Cs perovskite films through octylammonium bromide (OABr) additives. Consequently, the OA-Rb/Cs perovskite films exhibit blue amplified spontaneous emission (ASE) from defect-related bound excitons with a low threshold (13.5 μJ/cm) and a high optical gain (744.7 cm), which contribute to a vertical-cavity surface-emitting laser with single-mode blue emission at 482 nm. This work not only presents a facile method for creating blue laser gain materials but also provides valuable insights for further exploration of high-performance blue lasing in perovskite films.
