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使用[001]取向的多晶半金属赫斯勒合金CoFeGaGe和CoFe双层电极提高CPP-GMR读头传感器性能。

Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy CoFeGaGe and CoFe bilayer electrode.

作者信息

Taparia Dolly, Sasaki Taisuke, Nakatani Tomoya, Suto Hirofumi, Miura Yoshio, Li Zehao, Kushwaha Varun Kumar, Inubushi Kazuumi, Ichikawa Shinto, Nakada Katsuyuki, Sasaki Tomoyuki, Mitani Seiji, Sakuraba Yuya

机构信息

Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba, Japan.

Advanced Products Development Center, Technology & Intellectual Property HQ, TDK Corporation, Ichikawa, Japan.

出版信息

Sci Technol Adv Mater. 2024 Aug 14;25(1):2388503. doi: 10.1080/14686996.2024.2388503. eCollection 2024.

Abstract

A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) CoFeGaGe (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high ratio of 22.7% with the CoFe(4.5 nm)/CFGG(2.5 nm) bilayer electrodes, which is almost three(two) times larger than the ratio with the single CoFe(CFGG) (7 nm) electrodes. The bias voltage dependent study revealed an additional advantage of increasing the output voltage |Δ| by using the CoFe/CFGG bilayer due to the improvement of the endurance against spin-transfer torque under high bias current. A maximum output voltage of 6.5 mV was obtained with the CoFe(5.5 nm)/CFGG(1.5 nm) electrodes, which is the highest ever reported in the CPP-GMR devices with a uniform metallic spacer including high-quality epitaxial devices.

摘要

具有半金属电极的电流垂直于平面的巨磁阻(CPP-GMR)器件是下一代硬盘驱动器读取头最有前途的候选者之一。在本研究中,我们制备了具有正常铁磁体(NFM)CoFe/半金属铁磁体(HMFM)CoFeGaGe(CFGG)双层电极的[001]取向多晶CPP-GMR器件,以通过在NFM/HMFM界面处的大界面自旋相关散射来提高磁阻(MR)比率。CoFe/CFGG双层电极提供了额外的大界面自旋相关散射,并且对于CoFe(4.5 nm)/CFGG(2.5 nm)双层电极实现了22.7%的高比率,这几乎是单个CoFe(CFGG)(7 nm)电极比率的三倍(两倍)。偏置电压依赖性研究揭示了使用CoFe/CFGG双层增加输出电压|Δ|的另一个优点,这是由于在高偏置电流下对自旋转移转矩的耐受性得到了改善。使用CoFe(5.5 nm)/CFGG(1.5 nm)电极获得了6.5 mV的最大输出电压,这是在具有均匀金属间隔层的CPP-GMR器件(包括高质量外延器件)中报道的最高值。

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